TY - CONF

T1 - Transparent metal oxide thin-film transistors prepared by spray pyrolysis

AU - Bashir, Aneeqa

AU - Wöbkenberg, Paul

AU - Smith, Jeremy

AU - Adamopoulos, George

AU - Bradley, Donal

AU - Anthopoulos, Thomas

PY - 2009

Y1 - 2009

N2 - The next generation of optoelectronic devices, i.e. solar cells,optical displays, optical sensors, will strongly benefit from the emerging fieldof transparent electronics. The backbone of this technology is the unusualfamily of materials namely transparent metal oxides. Here we report on theuse of spray pyrolysis (SP) for the deposition of oxide semiconductors and thefabrication of transparent thin-film transistors (TFTs) and integrated circuits.SP combines the advantages of solution processing, compatibility with largearea deposition, relatively low temperature processing and the ability todeliver high quality and optically transparent semiconducting films. The SPmethod is compatible with a wide range of oxide precursors which enables thedeposition of not only transparent semiconductors but also conductive as wellas insulating oxide layers. To demonstrate the suitability of this technique forthe fabrication of transparent electronics we fabricate high mobility TFTs andintegrated circuits based on a range of oxide semiconductors including ZnOand TiO2. Temperature dependence charge transport studies, performed onselected materials systems, reveal a band like transport behaviour, providingfurther supporting evidences on the superior quality of the deposited films.Finally, the effect of chemical doping via simple physical blending with various elements is also discussed.

AB - The next generation of optoelectronic devices, i.e. solar cells,optical displays, optical sensors, will strongly benefit from the emerging fieldof transparent electronics. The backbone of this technology is the unusualfamily of materials namely transparent metal oxides. Here we report on theuse of spray pyrolysis (SP) for the deposition of oxide semiconductors and thefabrication of transparent thin-film transistors (TFTs) and integrated circuits.SP combines the advantages of solution processing, compatibility with largearea deposition, relatively low temperature processing and the ability todeliver high quality and optically transparent semiconducting films. The SPmethod is compatible with a wide range of oxide precursors which enables thedeposition of not only transparent semiconductors but also conductive as wellas insulating oxide layers. To demonstrate the suitability of this technique forthe fabrication of transparent electronics we fabricate high mobility TFTs andintegrated circuits based on a range of oxide semiconductors including ZnOand TiO2. Temperature dependence charge transport studies, performed onselected materials systems, reveal a band like transport behaviour, providingfurther supporting evidences on the superior quality of the deposited films.Finally, the effect of chemical doping via simple physical blending with various elements is also discussed.

M3 - Conference paper

T2 - EMRS Spring Meeting 2009

Y2 - 8 June 2009

ER -