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Vacancies and defect levels in III-V semiconductors

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Vacancies and defect levels in III-V semiconductors. / Tahini, H. A.; Chroneos, A.; Murphy, S. T.; Schwingenschloegl, U.; Grimes, R. W.

In: Journal of Applied Physics, Vol. 114, No. 6, 063517, 14.08.2013.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Tahini, HA, Chroneos, A, Murphy, ST, Schwingenschloegl, U & Grimes, RW 2013, 'Vacancies and defect levels in III-V semiconductors', Journal of Applied Physics, vol. 114, no. 6, 063517. https://doi.org/10.1063/1.4818484

APA

Tahini, H. A., Chroneos, A., Murphy, S. T., Schwingenschloegl, U., & Grimes, R. W. (2013). Vacancies and defect levels in III-V semiconductors. Journal of Applied Physics, 114(6), [063517]. https://doi.org/10.1063/1.4818484

Vancouver

Tahini HA, Chroneos A, Murphy ST, Schwingenschloegl U, Grimes RW. Vacancies and defect levels in III-V semiconductors. Journal of Applied Physics. 2013 Aug 14;114(6). 063517. https://doi.org/10.1063/1.4818484

Author

Tahini, H. A. ; Chroneos, A. ; Murphy, S. T. ; Schwingenschloegl, U. ; Grimes, R. W. / Vacancies and defect levels in III-V semiconductors. In: Journal of Applied Physics. 2013 ; Vol. 114, No. 6.

Bibtex

@article{4a744a6b3d7542deb1289d77cdce5123,
title = "Vacancies and defect levels in III-V semiconductors",
abstract = "Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges (-3",
keywords = "GENERALIZED GRADIENT APPROXIMATION, AB-INITIO, ELECTRONIC-STRUCTURE, GALLIUM-ARSENIDE, SELF-DIFFUSION, COMPOUND SEMICONDUCTORS, GAAS, ANTIMONIDE, IDENTIFICATION, PHOSPHIDE",
author = "Tahini, {H. A.} and A. Chroneos and Murphy, {S. T.} and U. Schwingenschloegl and Grimes, {R. W.}",
year = "2013",
month = aug,
day = "14",
doi = "10.1063/1.4818484",
language = "English",
volume = "114",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "6",

}

RIS

TY - JOUR

T1 - Vacancies and defect levels in III-V semiconductors

AU - Tahini, H. A.

AU - Chroneos, A.

AU - Murphy, S. T.

AU - Schwingenschloegl, U.

AU - Grimes, R. W.

PY - 2013/8/14

Y1 - 2013/8/14

N2 - Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges (-3

AB - Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges (-3

KW - GENERALIZED GRADIENT APPROXIMATION

KW - AB-INITIO

KW - ELECTRONIC-STRUCTURE

KW - GALLIUM-ARSENIDE

KW - SELF-DIFFUSION

KW - COMPOUND SEMICONDUCTORS

KW - GAAS

KW - ANTIMONIDE

KW - IDENTIFICATION

KW - PHOSPHIDE

U2 - 10.1063/1.4818484

DO - 10.1063/1.4818484

M3 - Journal article

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

M1 - 063517

ER -