Very low field electron emission from hot filament CVD grown microcrystalline diamond

School of Engineering

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Very low field electron emission from hot filament CVD grown microcrystalline diamond. / Satyanarayana, B.S.; Peng, X.L.; Adamopoulos, George et al.
In: MRS Online Proceedings Library, Vol. 621, 2000, p. Q531-Q537.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Satyanarayana, BS, Peng, XL, Adamopoulos, G, Robertson, J, Milne, WI & Clyne, TW 2000, 'Very low field electron emission from hot filament CVD grown microcrystalline diamond', MRS Online Proceedings Library, vol. 621, pp. Q531-Q537. https://doi.org/10.1557/PROC-621-Q5.3.1

APA

Satyanarayana, B. S., Peng, X. L., Adamopoulos, G., Robertson, J., Milne, W. I., & Clyne, T. W. (2000). Very low field electron emission from hot filament CVD grown microcrystalline diamond. MRS Online Proceedings Library, 621, Q531-Q537. https://doi.org/10.1557/PROC-621-Q5.3.1

Vancouver

Satyanarayana BS, Peng XL, Adamopoulos G, Robertson J, Milne WI, Clyne TW. Very low field electron emission from hot filament CVD grown microcrystalline diamond. MRS Online Proceedings Library. 2000;621:Q531-Q537. doi: 10.1557/PROC-621-Q5.3.1

Author

Satyanarayana, B.S. ; Peng, X.L. ; Adamopoulos, George et al. / Very low field electron emission from hot filament CVD grown microcrystalline diamond. In: MRS Online Proceedings Library. 2000 ; Vol. 621. pp. Q531-Q537.

Bibtex

@article{8059e8b0469a4b87b60b5f1d767852f1,

title = "Very low field electron emission from hot filament CVD grown microcrystalline diamond",

abstract = "Very low threshold field emission from undoped microcrystalline diamond films grown by the hot filament chemical vapour deposition process (HFCVD) is reported. The effect of crystal size, methane concentration and the temperature has been studied. The microcrystalline diamond films grown using 3% methane (CH4) / hydrogen (H2) gas mixture ratio under varying deposition temperatures exhibit very low emission threshold fields. The threshold fields varied from 0.4 V/μm to 1 V/μm for an emission current density of 1 μA/cm2. A correlation between the emission characteristics and the material properties is presented. These films exhibit an emission site density of ∼104-105/cm2 at an applied field of 3 V/μm.",

keywords = "Chemical vapor deposition, Concentration (process), Current density, Electron emission, Film growth, Polycrystalline materials, Hot filaments, Diamond films",

author = "B.S. Satyanarayana and X.L. Peng and George Adamopoulos and J. Robertson and W.I. Milne and T.W. Clyne",

year = "2000",

doi = "10.1557/PROC-621-Q5.3.1",

language = "English",

volume = "621",

pages = "Q531--Q537",

journal = "MRS Online Proceedings Library",

issn = "0272-9172",

publisher = "Materials Research Society",

}

RIS

TY - JOUR

T1 - Very low field electron emission from hot filament CVD grown microcrystalline diamond

AU - Satyanarayana, B.S.

AU - Peng, X.L.

AU - Adamopoulos, George

AU - Robertson, J.

AU - Milne, W.I.

AU - Clyne, T.W.

PY - 2000

Y1 - 2000

N2 - Very low threshold field emission from undoped microcrystalline diamond films grown by the hot filament chemical vapour deposition process (HFCVD) is reported. The effect of crystal size, methane concentration and the temperature has been studied. The microcrystalline diamond films grown using 3% methane (CH4) / hydrogen (H2) gas mixture ratio under varying deposition temperatures exhibit very low emission threshold fields. The threshold fields varied from 0.4 V/μm to 1 V/μm for an emission current density of 1 μA/cm2. A correlation between the emission characteristics and the material properties is presented. These films exhibit an emission site density of ∼104-105/cm2 at an applied field of 3 V/μm.

AB - Very low threshold field emission from undoped microcrystalline diamond films grown by the hot filament chemical vapour deposition process (HFCVD) is reported. The effect of crystal size, methane concentration and the temperature has been studied. The microcrystalline diamond films grown using 3% methane (CH4) / hydrogen (H2) gas mixture ratio under varying deposition temperatures exhibit very low emission threshold fields. The threshold fields varied from 0.4 V/μm to 1 V/μm for an emission current density of 1 μA/cm2. A correlation between the emission characteristics and the material properties is presented. These films exhibit an emission site density of ∼104-105/cm2 at an applied field of 3 V/μm.

KW - Chemical vapor deposition

KW - Concentration (process)

KW - Current density

KW - Electron emission

KW - Film growth

KW - Polycrystalline materials

KW - Hot filaments

KW - Diamond films

U2 - 10.1557/PROC-621-Q5.3.1

DO - 10.1557/PROC-621-Q5.3.1

M3 - Journal article

VL - 621

SP - Q531-Q537

JO - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

SN - 0272-9172

ER -

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