Description

By exploiting the fundamental properties of e-APDs and recent advances in InAs diode fabrication, researchers at Lancaster University (Lancaster, England) and the University of Sheffield (Sheffield, England) have made the first high-bandwidth, waveguide-coupled InAs e-APDs. ... This paves the way for future e-APDs that can achieve the terahertz gain-bandwidth products needed for next-generation communications and other high-speed detection applications.