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Research

Dr Dimitrios Afouxenidis

Research student

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  1. 2020
  2. Published

    Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress

    Paxinos, K., Antoniou, G., Afouxenidis, D., Mohamed, A., Dikko, U., Tsitsimpelis, I., Milne, W. I., Nathan, A. & Adamopoulos, G., 20/04/2020, In: Applied Physics Letters. 116, 16, 5 p., 163505.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Films Stoichiometry Effects on the Electronic Transport Properties of Solution-Processed Yttrium Doped Indium–Zinc Oxide Crystalline Semiconductors for Thin Film Transistor Applications

    Afouxenidis, D., Halcovitch, N. R., Milne, W. I., Nathan, A. & Adamopoulos, G., 1/04/2020, In: Advanced Electronic Materials. 6, 4, 10 p., 1900976.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. 2018
  5. Published

    High-k dielectrics based on solution processed composite oxides for metal oxide thin film transistors

    Afouxenidis, D., Milne, W. I., Bin Esro, M. & Adamopoulos, G., 06/2018.

    Research output: Contribution to conference - Without ISBN/ISSN › Speech

  6. Published

    Solution-processed metal oxide dielectrics and semiconductors for thin film transistor applications

    Afouxenidis, D., 2018, Lancaster University. 297 p.

    Research output: Thesis › Doctoral Thesis

  7. 2017
  8. Published

    Solution processed, high mobility thin film transistors employing Yttrium-doped Indium Zinc Oxide semiconducting channels

    Afouxenidis, D., Vourlias, G., Milne, W. I. & Adamopoulos, G., 23/05/2017.

    Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review

  9. Published

    High mobility p-type thin film transistors based on Cu2O semiconducting channels deposited from solutions at low temperatures

    Kouppas, N., Afouxenidis, D., Milne, W. I. & Adamopoulos, G., 22/05/2017.

    Research output: Contribution to conference - Without ISBN/ISSN › Speech

  10. 2016
  11. Published

    High mobility, solution processed p-type TFTs employing NiOx semiconducting channels

    Afouxenidis, D., Milne, W. I. & Adamopoulos, G., 05/2016.

    Research output: Contribution to conference - Without ISBN/ISSN › Speech

  12. Published

    ZnO-based thin film transistors employing Nb1-xAlxOy high-k dielectrics processed from solutions in ambient air

    Afouxenidis, D., Vourlias, G., Milne, W. I. & Adamopoulos, G., 05/2016.

    Research output: Contribution to conference - Without ISBN/ISSN › Speech

  13. 2015
  14. Published

    ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air

    Afouxenidis, D., Mazzocco, R., Vourlias, G., Livesley, P., Krier, A., Milne, W. I., Kolosov, O. & Adamopoulos, G., 8/04/2015, In: ACS Applied Materials and Interfaces. 7, 13, p. 7334-7341 8 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  15. Published

    High-mobility Gallium Indium Zinc Oxide-based thin film transistors grown by Spray Pyrolysis in Air

    Afouxenidis, D., Kolosov, O., Vourlias, G., Krier, A., Milne, W. I. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review

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