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Professor Manus Hayne SFHEA

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  1. 2025
  2. Published

    Physics, modeling, and benchmarking of ULTRARAM: A compoundsemiconductor-based memory device

    Kumar, A., Dar, M. F., Hodgson, P., Lane, D., Carrington, P., Delli, E., Beanland, R., Mehrotra, S., Hayne, M. & Dasgupta, A., 7/09/2025, In: Journal of Applied Physics. 138, 9, 095702.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Iso-electronic Sb impurities in GaAs studied by cross-sectional scanning tunneling microscopy

    Trevisan, A., Hodgson, P. D., Alvarado-César, F., Hayne, M., Beanland, R. & Koenraad, P. M., 21/05/2025, In: Journal of Applied Physics. 137, 19, 196702.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. 2024
  5. Published

    Au/Ni/Au as a contact for p-type GaAs

    Jones, S. O., Bancroft, E., Jarvis, S. P. & Hayne, M., 15/11/2024, In: Semiconductor Science and Technology. 39, 12, 6 p., 125011.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    GaSb quantum-rings for vertical-cavity surface-emitting lasers emitting at telecommunications and mobile sensing wavelengths

    Jones, S., Hodgson, P. & Hayne, M., 13/03/2024, Proceedings Volume 12904, Vertical-Cavity Surface-Emitting Lasers XXVIII; 129040J (2024). SPIE

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper

  7. 2023
  8. Published

    Defect formation in InGaAs/AlSb/InAs memory devices

    Trevisan, A., Hodgson, P., Lane, D., Hayne, M. & Koenraad, P. M., 25/05/2023, In: Journal of Vacuum Science and Technology B. 41, 4, 044001.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. 2022
  10. Published

    ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon

    Hodgson, P., Lane, D., Carrington, P., Delli, E., Beanland, R. & Hayne, M., 30/04/2022, In: Advanced Electronic Materials. 8, 4, 9 p., 2101103.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. 2021
  12. Published

    Simulations of resonant tunnelling through InAs/AlSb heterostructures for ULTRARAM™ memory

    Lane, D. & Hayne, M., 22/06/2021, In: Journal of Physics D: Applied Physics. 54, 35, 7 p., 335104.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  13. Published

    ULTRARAM: toward the development of a III-V semiconductor, non-volatile, random-access memory

    Lane, D., Hodgson, P., Potter, R., Beanland, R. & Hayne, M., 31/05/2021, In: IEEE Transactions on Electron Devices. 68, 5, p. 2271-2274 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  14. Published

    Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory

    Lane, D., Hodgson, P., Potter, R. & Hayne, M., 12/05/2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, p. 1-3 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  15. 2020
  16. Published

    IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES

    Lane, D. (Inventor) & Hayne, M. (Inventor), 3/12/2020, IPC No. G11C 16/04 2006.01, Patent No. WO/2020/240186, 28/05/2020

    Research output: Patent

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