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Bilayer graphene nanoribbon carrier statistic in degenerate and non degenerate limit

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published
  • Mahdi Mousavi
  • Mohammad Taghi Ahmadi
  • Hatef Sadeghi
  • Azadeh Nilghaz
  • Azizah Amin
  • Zaharah Johari
  • Razali Ismail
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<mark>Journal publication date</mark>1/10/2011
<mark>Journal</mark>Journal of Computational and Theoretical Nanoscience
Issue number10
Volume8
Number of pages4
Pages (from-to)2029-2032
Publication StatusPublished
<mark>Original language</mark>English

Abstract

Bilayer Graphene Nanoribbon (BGN) Carrier statistic in the non-degenerate and the degenerate limit is presented. Two dimensional BGN through AB configuration with width less than De-Broglie wave length can be understood as a one dimensional (1D) device. Based on the 1D behavior offered model illustrates exponential function of normalized Fermi energy which explains carrier concentration on low carrier regime. However on zero to 3kBT distance from and within conduction or valence bands high concentration of carriers sensitively depends on normalized Fermi energy which is independent of temperature as well. Since a BGN field effect transistor (BGNFET) can be shaped by using graphene bilayers with an external controllable voltage which is perpendicular to the layers in gates.