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Bilayer graphene nanoribbon carrier statistic in degenerate and non degenerate limit

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Bilayer graphene nanoribbon carrier statistic in degenerate and non degenerate limit. / Mousavi, Mahdi; Ahmadi, Mohammad Taghi; Sadeghi, Hatef et al.
In: Journal of Computational and Theoretical Nanoscience, Vol. 8, No. 10, 01.10.2011, p. 2029-2032.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Mousavi, M, Ahmadi, MT, Sadeghi, H, Nilghaz, A, Amin, A, Johari, Z & Ismail, R 2011, 'Bilayer graphene nanoribbon carrier statistic in degenerate and non degenerate limit', Journal of Computational and Theoretical Nanoscience, vol. 8, no. 10, pp. 2029-2032. https://doi.org/10.1166/jctn.2011.1921

APA

Mousavi, M., Ahmadi, M. T., Sadeghi, H., Nilghaz, A., Amin, A., Johari, Z., & Ismail, R. (2011). Bilayer graphene nanoribbon carrier statistic in degenerate and non degenerate limit. Journal of Computational and Theoretical Nanoscience, 8(10), 2029-2032. https://doi.org/10.1166/jctn.2011.1921

Vancouver

Mousavi M, Ahmadi MT, Sadeghi H, Nilghaz A, Amin A, Johari Z et al. Bilayer graphene nanoribbon carrier statistic in degenerate and non degenerate limit. Journal of Computational and Theoretical Nanoscience. 2011 Oct 1;8(10):2029-2032. doi: 10.1166/jctn.2011.1921

Author

Mousavi, Mahdi ; Ahmadi, Mohammad Taghi ; Sadeghi, Hatef et al. / Bilayer graphene nanoribbon carrier statistic in degenerate and non degenerate limit. In: Journal of Computational and Theoretical Nanoscience. 2011 ; Vol. 8, No. 10. pp. 2029-2032.

Bibtex

@article{0e520c1c16644bc0b090eb94d9be17f4,
title = "Bilayer graphene nanoribbon carrier statistic in degenerate and non degenerate limit",
abstract = "Bilayer Graphene Nanoribbon (BGN) Carrier statistic in the non-degenerate and the degenerate limit is presented. Two dimensional BGN through AB configuration with width less than De-Broglie wave length can be understood as a one dimensional (1D) device. Based on the 1D behavior offered model illustrates exponential function of normalized Fermi energy which explains carrier concentration on low carrier regime. However on zero to 3kBT distance from and within conduction or valence bands high concentration of carriers sensitively depends on normalized Fermi energy which is independent of temperature as well. Since a BGN field effect transistor (BGNFET) can be shaped by using graphene bilayers with an external controllable voltage which is perpendicular to the layers in gates. ",
keywords = "BILAYER GRAPHENE NANORIBBON (BGN), DEGENERATE CARRIER STATISTIC, FERMI ENERGY, NON DEGENERATE CARRIER STATISTIC",
author = "Mahdi Mousavi and Ahmadi, {Mohammad Taghi} and Hatef Sadeghi and Azadeh Nilghaz and Azizah Amin and Zaharah Johari and Razali Ismail",
year = "2011",
month = oct,
day = "1",
doi = "10.1166/jctn.2011.1921",
language = "English",
volume = "8",
pages = "2029--2032",
journal = "Journal of Computational and Theoretical Nanoscience",
issn = "1546-1955",
publisher = "American Scientific Publishers",
number = "10",

}

RIS

TY - JOUR

T1 - Bilayer graphene nanoribbon carrier statistic in degenerate and non degenerate limit

AU - Mousavi, Mahdi

AU - Ahmadi, Mohammad Taghi

AU - Sadeghi, Hatef

AU - Nilghaz, Azadeh

AU - Amin, Azizah

AU - Johari, Zaharah

AU - Ismail, Razali

PY - 2011/10/1

Y1 - 2011/10/1

N2 - Bilayer Graphene Nanoribbon (BGN) Carrier statistic in the non-degenerate and the degenerate limit is presented. Two dimensional BGN through AB configuration with width less than De-Broglie wave length can be understood as a one dimensional (1D) device. Based on the 1D behavior offered model illustrates exponential function of normalized Fermi energy which explains carrier concentration on low carrier regime. However on zero to 3kBT distance from and within conduction or valence bands high concentration of carriers sensitively depends on normalized Fermi energy which is independent of temperature as well. Since a BGN field effect transistor (BGNFET) can be shaped by using graphene bilayers with an external controllable voltage which is perpendicular to the layers in gates.

AB - Bilayer Graphene Nanoribbon (BGN) Carrier statistic in the non-degenerate and the degenerate limit is presented. Two dimensional BGN through AB configuration with width less than De-Broglie wave length can be understood as a one dimensional (1D) device. Based on the 1D behavior offered model illustrates exponential function of normalized Fermi energy which explains carrier concentration on low carrier regime. However on zero to 3kBT distance from and within conduction or valence bands high concentration of carriers sensitively depends on normalized Fermi energy which is independent of temperature as well. Since a BGN field effect transistor (BGNFET) can be shaped by using graphene bilayers with an external controllable voltage which is perpendicular to the layers in gates.

KW - BILAYER GRAPHENE NANORIBBON (BGN)

KW - DEGENERATE CARRIER STATISTIC

KW - FERMI ENERGY

KW - NON DEGENERATE CARRIER STATISTIC

U2 - 10.1166/jctn.2011.1921

DO - 10.1166/jctn.2011.1921

M3 - Journal article

VL - 8

SP - 2029

EP - 2032

JO - Journal of Computational and Theoretical Nanoscience

JF - Journal of Computational and Theoretical Nanoscience

SN - 1546-1955

IS - 10

ER -