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InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications

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Published
  • Bahram Ganjipour
  • Ofogh Tizno
  • Magnus Heurlin
  • Magnus T Borgström
  • Claes Thelander
  • Lars Samuelson
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Publication date2014
Host publicationDevice Research Conference (DRC), 2014 72nd Annual
PublisherIEEE
Pages123-124
Number of pages2
ISBN (print)9781479954056
<mark>Original language</mark>English
EventDevice Research Conference (DRC) - Santa barbara, United States
Duration: 21/06/2014 → …

Conference

ConferenceDevice Research Conference (DRC)
Country/TerritoryUnited States
CitySanta barbara
Period21/06/14 → …

Conference

ConferenceDevice Research Conference (DRC)
Country/TerritoryUnited States
CitySanta barbara
Period21/06/14 → …

Abstract

Ever since the invention of the tunnel diodes by Leo Esaki in 1957, they have been the subject of numerous studies as building blocks for ultra-low power electronics and also as sub-cell connections in multi-junction solar cells. Tunneling field-effect transistors (TFETs) have attracted a lot of attention for ultra low-power electronic applications because of superior OFF-state performance. However, to date, TFETs suffer from poor-ON state currents which can be addressed by increasing the tunneling area and electric field. In this respect, radial nanowire heterostructures are attractive candidates for boosting the ON-state of T-FETs because the tunneling area is proportional to LchannelRNW. A core/shell geometry also enables the gate electric field to align with the internal junction field which may result in an improved SS.