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InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications

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InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications. / Ganjipour, Bahram ; Tizno, Ofogh; Heurlin, Magnus et al.
Device Research Conference (DRC), 2014 72nd Annual. IEEE, 2014. p. 123-124.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Ganjipour, B, Tizno, O, Heurlin, M, Borgström , MT, Thelander, C & Samuelson, L 2014, InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications. in Device Research Conference (DRC), 2014 72nd Annual. IEEE, pp. 123-124, Device Research Conference (DRC), Santa barbara, United States, 21/06/14. https://doi.org/10.1109/DRC.2014.6872328

APA

Ganjipour, B., Tizno, O., Heurlin, M., Borgström , M. T., Thelander, C., & Samuelson, L. (2014). InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications. In Device Research Conference (DRC), 2014 72nd Annual (pp. 123-124). IEEE. https://doi.org/10.1109/DRC.2014.6872328

Vancouver

Ganjipour B, Tizno O, Heurlin M, Borgström MT, Thelander C, Samuelson L. InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications. In Device Research Conference (DRC), 2014 72nd Annual. IEEE. 2014. p. 123-124 doi: 10.1109/DRC.2014.6872328

Author

Ganjipour, Bahram ; Tizno, Ofogh ; Heurlin, Magnus et al. / InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications. Device Research Conference (DRC), 2014 72nd Annual. IEEE, 2014. pp. 123-124

Bibtex

@inproceedings{10f23d711c534dbd989d82f9c33528da,
title = "InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications",
abstract = "Ever since the invention of the tunnel diodes by Leo Esaki in 1957, they have been the subject of numerous studies as building blocks for ultra-low power electronics and also as sub-cell connections in multi-junction solar cells. Tunneling field-effect transistors (TFETs) have attracted a lot of attention for ultra low-power electronic applications because of superior OFF-state performance. However, to date, TFETs suffer from poor-ON state currents which can be addressed by increasing the tunneling area and electric field. In this respect, radial nanowire heterostructures are attractive candidates for boosting the ON-state of T-FETs because the tunneling area is proportional to LchannelRNW. A core/shell geometry also enables the gate electric field to align with the internal junction field which may result in an improved SS.",
author = "Bahram Ganjipour and Ofogh Tizno and Magnus Heurlin and Borgstr{\"o}m, {Magnus T} and Claes Thelander and Lars Samuelson",
year = "2014",
doi = "10.1109/DRC.2014.6872328",
language = "English",
isbn = "9781479954056",
pages = "123--124",
booktitle = "Device Research Conference (DRC), 2014 72nd Annual",
publisher = "IEEE",
note = "Device Research Conference (DRC) ; Conference date: 21-06-2014",

}

RIS

TY - GEN

T1 - InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications

AU - Ganjipour, Bahram

AU - Tizno, Ofogh

AU - Heurlin, Magnus

AU - Borgström , Magnus T

AU - Thelander, Claes

AU - Samuelson, Lars

PY - 2014

Y1 - 2014

N2 - Ever since the invention of the tunnel diodes by Leo Esaki in 1957, they have been the subject of numerous studies as building blocks for ultra-low power electronics and also as sub-cell connections in multi-junction solar cells. Tunneling field-effect transistors (TFETs) have attracted a lot of attention for ultra low-power electronic applications because of superior OFF-state performance. However, to date, TFETs suffer from poor-ON state currents which can be addressed by increasing the tunneling area and electric field. In this respect, radial nanowire heterostructures are attractive candidates for boosting the ON-state of T-FETs because the tunneling area is proportional to LchannelRNW. A core/shell geometry also enables the gate electric field to align with the internal junction field which may result in an improved SS.

AB - Ever since the invention of the tunnel diodes by Leo Esaki in 1957, they have been the subject of numerous studies as building blocks for ultra-low power electronics and also as sub-cell connections in multi-junction solar cells. Tunneling field-effect transistors (TFETs) have attracted a lot of attention for ultra low-power electronic applications because of superior OFF-state performance. However, to date, TFETs suffer from poor-ON state currents which can be addressed by increasing the tunneling area and electric field. In this respect, radial nanowire heterostructures are attractive candidates for boosting the ON-state of T-FETs because the tunneling area is proportional to LchannelRNW. A core/shell geometry also enables the gate electric field to align with the internal junction field which may result in an improved SS.

U2 - 10.1109/DRC.2014.6872328

DO - 10.1109/DRC.2014.6872328

M3 - Conference contribution/Paper

SN - 9781479954056

SP - 123

EP - 124

BT - Device Research Conference (DRC), 2014 72nd Annual

PB - IEEE

T2 - Device Research Conference (DRC)

Y2 - 21 June 2014

ER -