Research output: Contribution to Journal/Magazine › Journal article › peer-review
<mark>Journal publication date</mark> | 03/2008 |
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<mark>Journal</mark> | Microelectronics Journal |
Issue number | 3-4 |
Volume | 39 |
Number of pages | 4 |
Pages (from-to) | 314-317 |
Publication Status | Published |
<mark>Original language</mark> | English |
We have fabricated a single quantum dot in the two-dimensional electron gas of a free-standing GaAs/AlGaAs heterostructure. Standard processing techniques are used to define the dot on a narrow mesa and selective etching undercuts the device to form a 120 nm thick free-standing beam connected to the substrate by source and drain regions. Work by Weig et al. [Phys. Rev. Lett. 92(4) (2004) 046804] on similar devices has provided evidence for phonon blockade which suppresses conduction at low temperatures and bias. Further studies are presented here that can only partially be explained by this theory. A similar gap in conductance has been seen, but evolution of the structure in a magnetic field suggests an alternative explanation of multiple dots in series, may better explain the results. (