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Single electron transport in a free-standing quantum dot

Research output: Contribution to journalJournal articlepeer-review

  • S. J. Chorley
  • C. G. Smith
  • F. Perez-Martinez
  • J. Prance
  • P. Atkinson
  • D. A. Ritchie
  • G. A. C. Jones
<mark>Journal publication date</mark>03/2008
<mark>Journal</mark>Microelectronics Journal
Issue number3-4
Number of pages4
Pages (from-to)314-317
Publication StatusPublished
<mark>Original language</mark>English


We have fabricated a single quantum dot in the two-dimensional electron gas of a free-standing GaAs/AlGaAs heterostructure. Standard processing techniques are used to define the dot on a narrow mesa and selective etching undercuts the device to form a 120 nm thick free-standing beam connected to the substrate by source and drain regions. Work by Weig et al. [Phys. Rev. Lett. 92(4) (2004) 046804] on similar devices has provided evidence for phonon blockade which suppresses conduction at low temperatures and bias. Further studies are presented here that can only partially be explained by this theory. A similar gap in conductance has been seen, but evolution of the structure in a magnetic field suggests an alternative explanation of multiple dots in series, may better explain the results. (