The realization of midinfrared GaInSb/AlGaInSb type I quantum well diode lasers grown on GaAs is reported. Lasing was observed up to 95 K, at an emission wavelength of ~3.5 µm, threshold current density of 115 A/cm2, and with a characteristic temperature T0~51 K.
Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 91 (13), 2007 and may be found at http://link.aip.org/link/?APPLAB/91/131118/1
