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Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. .

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Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. . / Nash, G. R.; Smith, S. J.; Coomber, S. D.; Przeslak, S.; Andreev, A.; Carrington, P.; Yin, M.; Krier, A.; Buckle, L.; Emeny, M. T.; Ashley, T.

In: Applied Physics Letters, Vol. 91, No. 13, 24.09.2007, p. 131118.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Nash, GR, Smith, SJ, Coomber, SD, Przeslak, S, Andreev, A, Carrington, P, Yin, M, Krier, A, Buckle, L, Emeny, MT & Ashley, T 2007, 'Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. .', Applied Physics Letters, vol. 91, no. 13, pp. 131118. https://doi.org/10.1063/1.2793821

APA

Nash, G. R., Smith, S. J., Coomber, S. D., Przeslak, S., Andreev, A., Carrington, P., Yin, M., Krier, A., Buckle, L., Emeny, M. T., & Ashley, T. (2007). Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. . Applied Physics Letters, 91(13), 131118. https://doi.org/10.1063/1.2793821

Vancouver

Nash GR, Smith SJ, Coomber SD, Przeslak S, Andreev A, Carrington P et al. Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. . Applied Physics Letters. 2007 Sep 24;91(13):131118. https://doi.org/10.1063/1.2793821

Author

Nash, G. R. ; Smith, S. J. ; Coomber, S. D. ; Przeslak, S. ; Andreev, A. ; Carrington, P. ; Yin, M. ; Krier, A. ; Buckle, L. ; Emeny, M. T. ; Ashley, T. / Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. . In: Applied Physics Letters. 2007 ; Vol. 91, No. 13. pp. 131118.

Bibtex

@article{ce6cdc85946446268b6b2f7f9638620b,
title = "Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. .",
abstract = "The realization of midinfrared GaInSb/AlGaInSb type I quantum well diode lasers grown on GaAs is reported. Lasing was observed up to 95 K, at an emission wavelength of ~3.5 µm, threshold current density of 115 A/cm2, and with a characteristic temperature T0~51 K.",
author = "Nash, {G. R.} and Smith, {S. J.} and Coomber, {S. D.} and S. Przeslak and A. Andreev and P. Carrington and M. Yin and A. Krier and L. Buckle and Emeny, {M. T.} and T. Ashley",
note = "Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 91 (13), 2007 and may be found at http://link.aip.org/link/?APPLAB/91/131118/1",
year = "2007",
month = sep,
day = "24",
doi = "10.1063/1.2793821",
language = "English",
volume = "91",
pages = "131118",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "13",

}

RIS

TY - JOUR

T1 - Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. .

AU - Nash, G. R.

AU - Smith, S. J.

AU - Coomber, S. D.

AU - Przeslak, S.

AU - Andreev, A.

AU - Carrington, P.

AU - Yin, M.

AU - Krier, A.

AU - Buckle, L.

AU - Emeny, M. T.

AU - Ashley, T.

N1 - Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 91 (13), 2007 and may be found at http://link.aip.org/link/?APPLAB/91/131118/1

PY - 2007/9/24

Y1 - 2007/9/24

N2 - The realization of midinfrared GaInSb/AlGaInSb type I quantum well diode lasers grown on GaAs is reported. Lasing was observed up to 95 K, at an emission wavelength of ~3.5 µm, threshold current density of 115 A/cm2, and with a characteristic temperature T0~51 K.

AB - The realization of midinfrared GaInSb/AlGaInSb type I quantum well diode lasers grown on GaAs is reported. Lasing was observed up to 95 K, at an emission wavelength of ~3.5 µm, threshold current density of 115 A/cm2, and with a characteristic temperature T0~51 K.

U2 - 10.1063/1.2793821

DO - 10.1063/1.2793821

M3 - Journal article

VL - 91

SP - 131118

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -