Research output: Contribution to Journal/Magazine › Journal article › peer-review
Article number | 112507 |
---|---|
<mark>Journal publication date</mark> | 11/2009 |
<mark>Journal</mark> | Applied Physics Letters |
Issue number | 11 |
Volume | 95 |
Number of pages | 3 |
Publication Status | Published |
Early online date | 17/09/09 |
<mark>Original language</mark> | English |
Pumping characteristics were studied of a hybrid normal-metal/ superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 k were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1-1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.