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Pumping properties of the hybrid single-electron transistor in dissipative environment

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Pumping properties of the hybrid single-electron transistor in dissipative environment. / Lotkhov, S. V.; Kemppinen, A.; Kafanov, Sergey et al.
In: Applied Physics Letters, Vol. 95, No. 11, 112507, 11.2009.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Lotkhov, SV, Kemppinen, A, Kafanov, S, Pekola, JP & Zorin, AB 2009, 'Pumping properties of the hybrid single-electron transistor in dissipative environment', Applied Physics Letters, vol. 95, no. 11, 112507. https://doi.org/10.1063/1.3227839

APA

Lotkhov, S. V., Kemppinen, A., Kafanov, S., Pekola, J. P., & Zorin, A. B. (2009). Pumping properties of the hybrid single-electron transistor in dissipative environment. Applied Physics Letters, 95(11), Article 112507. https://doi.org/10.1063/1.3227839

Vancouver

Lotkhov SV, Kemppinen A, Kafanov S, Pekola JP, Zorin AB. Pumping properties of the hybrid single-electron transistor in dissipative environment. Applied Physics Letters. 2009 Nov;95(11):112507. Epub 2009 Sept 17. doi: 10.1063/1.3227839

Author

Lotkhov, S. V. ; Kemppinen, A. ; Kafanov, Sergey et al. / Pumping properties of the hybrid single-electron transistor in dissipative environment. In: Applied Physics Letters. 2009 ; Vol. 95, No. 11.

Bibtex

@article{e7437bf9461c46bbb77d4b09a28c8ab4,
title = "Pumping properties of the hybrid single-electron transistor in dissipative environment",
abstract = "Pumping characteristics were studied of a hybrid normal-metal/ superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 k were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1-1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.",
author = "Lotkhov, {S. V.} and A. Kemppinen and Sergey Kafanov and Pekola, {J. P.} and Zorin, {A. B.}",
year = "2009",
month = nov,
doi = "10.1063/1.3227839",
language = "English",
volume = "95",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "11",

}

RIS

TY - JOUR

T1 - Pumping properties of the hybrid single-electron transistor in dissipative environment

AU - Lotkhov, S. V.

AU - Kemppinen, A.

AU - Kafanov, Sergey

AU - Pekola, J. P.

AU - Zorin, A. B.

PY - 2009/11

Y1 - 2009/11

N2 - Pumping characteristics were studied of a hybrid normal-metal/ superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 k were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1-1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.

AB - Pumping characteristics were studied of a hybrid normal-metal/ superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 k were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1-1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.

U2 - 10.1063/1.3227839

DO - 10.1063/1.3227839

M3 - Journal article

AN - SCOPUS:70349495677

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 112507

ER -