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Asymmetric dark current in double-barrier quantum well infrared photodetectors

Research output: Contribution to journalJournal article

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<mark>Journal publication date</mark>1998
<mark>Journal</mark>Proceedings of the Society of Photo-Optical Instrumentation Engineers
Volume3437
Number of pages5
Pages (from-to)391-395
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

Asymmetric dark current and photocurrent versus voltage characteristic in the Double Barrier Quantum Wells (DBQWs) photovoltaic infrared photodetector has been studied. A model based on asymmetric potential barriers was proposed. The asymmetric potential thick barrier, which due to the Si dopant segregation during growth makes a major contribution to the asymmetrical I-V characteristic, calculations based on our model agree well with experimental results. This work also confirms the potential use of this DBQWs for infrared photodetector with large responsivity and little dark current under negative bias.