TY - JOUR

T1 - Asymmetric dark current in double-barrier quantum well infrared photodetectors

AU - Zhuang, Qiandong

AU - Li, Jinmin

AU - Lin, Lanying

PY - 1998

Y1 - 1998

N2 - Asymmetric dark current and photocurrent versus voltage characteristic in the Double Barrier Quantum Wells (DBQWs) photovoltaic infrared photodetector has been studied. A model based on asymmetric potential barriers was proposed. The asymmetric potential thick barrier, which due to the Si dopant segregation during growth makes a major contribution to the asymmetrical I-V characteristic, calculations based on our model agree well with experimental results. This work also confirms the potential use of this DBQWs for infrared photodetector with large responsivity and little dark current under negative bias.

AB - Asymmetric dark current and photocurrent versus voltage characteristic in the Double Barrier Quantum Wells (DBQWs) photovoltaic infrared photodetector has been studied. A model based on asymmetric potential barriers was proposed. The asymmetric potential thick barrier, which due to the Si dopant segregation during growth makes a major contribution to the asymmetrical I-V characteristic, calculations based on our model agree well with experimental results. This work also confirms the potential use of this DBQWs for infrared photodetector with large responsivity and little dark current under negative bias.

U2 - 10.1117/12.331318

DO - 10.1117/12.331318

M3 - Journal article

VL - 3437

SP - 391

EP - 395

JO - Proceedings of the Society of Photo-Optical Instrumentation Engineers

JF - Proceedings of the Society of Photo-Optical Instrumentation Engineers

SN - 0361-0748

ER -