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    Rights statement: https://www.cambridge.org/core/journals/mrs-advances/article/atomic-scale-authentication-with-resonant-tunneling-diodes/5165F21897043FFF383867E3808C7DE8 The final, definitive version of this article has been published in the Journal, MRS Advances, 1 (22, pp 1625-1629 2016, © 2016 Cambridge University Press.

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Atomic-scale authentication with resonant tunneling diodes

Research output: Contribution to journalJournal article

Published
<mark>Journal publication date</mark>2016
<mark>Journal</mark>MRS Advances
Issue number22
Volume1
Number of pages5
Pages (from-to)1625-1629
Publication statusPublished
Early online date24/02/16
Original languageEnglish

Abstract

The room temperature electronic characteristics of resonant tunneling diodes (RTDs) containing AlAs/InGaAs quantum wells are studied. Differences in the peak current and voltages, associated with device-to-device variations in the structure and width of the quantum well are analyzed. A method to use these differences between devices is introduced and shown to uniquely identify each of the individual devices under test. This investigation shows that quantum confinement in RTDs allows them to operate as physical unclonable functions.

Bibliographic note

https://www.cambridge.org/core/journals/mrs-advances/article/atomic-scale-authentication-with-resonant-tunneling-diodes/5165F21897043FFF383867E3808C7DE8 The final, definitive version of this article has been published in the Journal, MRS Advances, 1 (22, pp 1625-1629 2016, © 2016 Cambridge University Press.