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    Rights statement: https://www.cambridge.org/core/journals/mrs-advances/article/atomic-scale-authentication-with-resonant-tunneling-diodes/5165F21897043FFF383867E3808C7DE8 The final, definitive version of this article has been published in the Journal, MRS Advances, 1 (22, pp 1625-1629 2016, © 2016 Cambridge University Press.

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Atomic-scale authentication with resonant tunneling diodes

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Atomic-scale authentication with resonant tunneling diodes. / Roberts, Jonny; Bagci, Ibrahim Ethem; Zawawi, M. A. M. et al.
In: MRS Advances, Vol. 1, No. 22, 2016, p. 1625-1629.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Roberts, J, Bagci, IE, Zawawi, MAM, Sexton, J, Hulbert, N, Noori, Y, Woodhead, C, Missous, M, Migliorato, MA, Roedig, U & Young, RJ 2016, 'Atomic-scale authentication with resonant tunneling diodes', MRS Advances, vol. 1, no. 22, pp. 1625-1629. https://doi.org/10.1557/adv.2016.156

APA

Roberts, J., Bagci, I. E., Zawawi, M. A. M., Sexton, J., Hulbert, N., Noori, Y., Woodhead, C., Missous, M., Migliorato, M. A., Roedig, U., & Young, R. J. (2016). Atomic-scale authentication with resonant tunneling diodes. MRS Advances, 1(22), 1625-1629. https://doi.org/10.1557/adv.2016.156

Vancouver

Roberts J, Bagci IE, Zawawi MAM, Sexton J, Hulbert N, Noori Y et al. Atomic-scale authentication with resonant tunneling diodes. MRS Advances. 2016;1(22):1625-1629. Epub 2016 Feb 24. doi: 10.1557/adv.2016.156

Author

Roberts, Jonny ; Bagci, Ibrahim Ethem ; Zawawi, M. A. M. et al. / Atomic-scale authentication with resonant tunneling diodes. In: MRS Advances. 2016 ; Vol. 1, No. 22. pp. 1625-1629.

Bibtex

@article{fe785b70a24e4206b04b70aa5eb26688,
title = "Atomic-scale authentication with resonant tunneling diodes",
abstract = "The room temperature electronic characteristics of resonant tunneling diodes (RTDs) containing AlAs/InGaAs quantum wells are studied. Differences in the peak current and voltages, associated with device-to-device variations in the structure and width of the quantum well are analyzed. A method to use these differences between devices is introduced and shown to uniquely identify each of the individual devices under test. This investigation shows that quantum confinement in RTDs allows them to operate as physical unclonable functions.",
keywords = "quantum security, semiconductor materials, DIODE",
author = "Jonny Roberts and Bagci, {Ibrahim Ethem} and Zawawi, {M. A. M.} and J. Sexton and N. Hulbert and Yasir Noori and Christopher Woodhead and Mohammed Missous and Migliorato, {M. A.} and Utz Roedig and Young, {Robert James}",
note = "https://www.cambridge.org/core/journals/mrs-advances/article/atomic-scale-authentication-with-resonant-tunneling-diodes/5165F21897043FFF383867E3808C7DE8 The final, definitive version of this article has been published in the Journal, MRS Advances, 1 (22, pp 1625-1629 2016, {\textcopyright} 2016 Cambridge University Press.",
year = "2016",
doi = "10.1557/adv.2016.156",
language = "English",
volume = "1",
pages = "1625--1629",
journal = "MRS Advances",
issn = "2059-8521",
publisher = "Cambridge University Press",
number = "22",

}

RIS

TY - JOUR

T1 - Atomic-scale authentication with resonant tunneling diodes

AU - Roberts, Jonny

AU - Bagci, Ibrahim Ethem

AU - Zawawi, M. A. M.

AU - Sexton, J.

AU - Hulbert, N.

AU - Noori, Yasir

AU - Woodhead, Christopher

AU - Missous, Mohammed

AU - Migliorato, M. A.

AU - Roedig, Utz

AU - Young, Robert James

N1 - https://www.cambridge.org/core/journals/mrs-advances/article/atomic-scale-authentication-with-resonant-tunneling-diodes/5165F21897043FFF383867E3808C7DE8 The final, definitive version of this article has been published in the Journal, MRS Advances, 1 (22, pp 1625-1629 2016, © 2016 Cambridge University Press.

PY - 2016

Y1 - 2016

N2 - The room temperature electronic characteristics of resonant tunneling diodes (RTDs) containing AlAs/InGaAs quantum wells are studied. Differences in the peak current and voltages, associated with device-to-device variations in the structure and width of the quantum well are analyzed. A method to use these differences between devices is introduced and shown to uniquely identify each of the individual devices under test. This investigation shows that quantum confinement in RTDs allows them to operate as physical unclonable functions.

AB - The room temperature electronic characteristics of resonant tunneling diodes (RTDs) containing AlAs/InGaAs quantum wells are studied. Differences in the peak current and voltages, associated with device-to-device variations in the structure and width of the quantum well are analyzed. A method to use these differences between devices is introduced and shown to uniquely identify each of the individual devices under test. This investigation shows that quantum confinement in RTDs allows them to operate as physical unclonable functions.

KW - quantum security

KW - semiconductor materials

KW - DIODE

U2 - 10.1557/adv.2016.156

DO - 10.1557/adv.2016.156

M3 - Journal article

VL - 1

SP - 1625

EP - 1629

JO - MRS Advances

JF - MRS Advances

SN - 2059-8521

IS - 22

ER -