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Avalanche multiplication in InAlAs

Research output: Contribution to journalJournal article

Published

  • Y. L. Goh
  • D. J. Massey
  • A. R. J. Marshall
  • J. S. Ng
  • C. H. Tan
  • W. K. Ng
  • G. J. Rees
  • A. Hopkinson
  • J. P. R. David
  • S. K. Jones

Associated organisational unit

Journal publication date01/2007
JournalIEEE Transactions on Electron Devices
Journal number1
Volume54
Number of pages6
Pages11-16
Original languageEnglish

Abstract

A systematic study of avalanche multiplication on a series of In0.52Al0.48As p(+)-i-n(+) and n(+)-i-p(+) diodes with nominal intrinsic region thicknesses ranging from 0.1 to 2.5 mu m has been used to deduce effective ionization coefficients between 220 and 980 kV (.) cm(-1). The electron and hole ionization coefficient ratio varies from 32.6 to 1.2 with increasing field. Tunneling begins to dominate the bulk current prior to avalanche breakdown in the 0.1-mu m-thick structure, imposing an upper limit to the operating field. While the local model can accurately predict the breakdown in the diodes, multiplication is overestimated at low fields. The effects of ionization dead space, which becomes more significant as the intrinsic region thickness reduces, can be corrected for by using a simple correction technique.