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  • ValleydegeneracybreakingbymagneticfieldinmonolayerMoSe2

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  • MoSe2

    Rights statement: © 2015 American Physical Society

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Breaking of valley degeneracy by magnetic field in monolayer MoSe2

Research output: Contribution to journalJournal articlepeer-review

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  • David MacNeill
  • Colin Heikes
  • Kin Fai Mak
  • Zachary Anderson
  • Andor Kormanyos
  • Viktor Zolyomi
  • Jiwoong Park
  • Daniel C. Ralph
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Article number037401
<mark>Journal publication date</mark>22/01/2015
<mark>Journal</mark>Physical review letters
Issue number3
Volume114
Number of pages5
Publication StatusPublished
<mark>Original language</mark>English

Abstract

Using polarization-resolved photoluminescence spectroscopy, we investigate the breaking of valley degeneracy by an out-of-plane magnetic field in back-gated monolayer MoSe2 devices. We observe a linear splitting of -0.22 meV/T between luminescence peak energies in sigma(+) and sigma(-) emission for both neutral and charged excitons. The optical selection rules of monolayer MoSe2 couple the photon handedness to the exciton valley degree of freedom; so this splitting demonstrates valley degeneracy breaking. In addition, we find that the luminescence handedness can be controlled with a magnetic field to a degree that depends on the back-gate voltage. An applied magnetic field, therefore, provides effective strategies for control over the valley degree of freedom.

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© 2015 American Physical Society