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Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells

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Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells. / Fujita, Hiromi; James Asirvatham, Juanita; Carrington, Peter; Marshall, Andrew; Krier, Anthony; Wagener, Magnus C. ; Botha, Johannes Reinhardt .

In: Semiconductor Science and Technology, Vol. 29, No. 3, 035014, 03.2014.

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Fujita, Hiromi ; James Asirvatham, Juanita ; Carrington, Peter ; Marshall, Andrew ; Krier, Anthony ; Wagener, Magnus C. ; Botha, Johannes Reinhardt . / Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells. In: Semiconductor Science and Technology. 2014 ; Vol. 29, No. 3.

Bibtex

@article{4c5a157cc3c1472a9a0fc71675efbfa0,
title = "Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells",
abstract = "The introduction of quantum dot (QD) or quantum ring (QR) nanostructures into GaAs single-junction solar cells has shown enhanced photo-response above the GaAs absorption edge, because of sub-bandgap photon absorption. However, to further improve solar cell performance a better understanding of the mechanisms of photogenerated carrier extraction from QDs and QRs is needed. In this work we have used a direct excitation technique to study type II GaSb/GaAs quantum ring solar cells using a 1064 nm infrared laser, which enables us to excite electron-hole pairs directly within the GaSb QRs without exciting the GaAs host material. Temperature and laser intensity dependence of the current-voltage characteristics revealed that the thermionic emission process produced the dominant contribution to the photocurrent and accounts for 98.9{\%} of total photocurrent at 0 V and 300 K. Although the tunnelling process gives only a low contribution to the photocurrent, an enhancement of the tunnelling current was clearly observed when an external electric field was applied.",
author = "Hiromi Fujita and {James Asirvatham}, Juanita and Peter Carrington and Andrew Marshall and Anthony Krier and Wagener, {Magnus C.} and Botha, {Johannes Reinhardt}",
year = "2014",
month = "3",
doi = "10.1088/0268-1242/29/3/035014",
language = "English",
volume = "29",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "3",

}

RIS

TY - JOUR

T1 - Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells

AU - Fujita, Hiromi

AU - James Asirvatham, Juanita

AU - Carrington, Peter

AU - Marshall, Andrew

AU - Krier, Anthony

AU - Wagener, Magnus C.

AU - Botha, Johannes Reinhardt

PY - 2014/3

Y1 - 2014/3

N2 - The introduction of quantum dot (QD) or quantum ring (QR) nanostructures into GaAs single-junction solar cells has shown enhanced photo-response above the GaAs absorption edge, because of sub-bandgap photon absorption. However, to further improve solar cell performance a better understanding of the mechanisms of photogenerated carrier extraction from QDs and QRs is needed. In this work we have used a direct excitation technique to study type II GaSb/GaAs quantum ring solar cells using a 1064 nm infrared laser, which enables us to excite electron-hole pairs directly within the GaSb QRs without exciting the GaAs host material. Temperature and laser intensity dependence of the current-voltage characteristics revealed that the thermionic emission process produced the dominant contribution to the photocurrent and accounts for 98.9% of total photocurrent at 0 V and 300 K. Although the tunnelling process gives only a low contribution to the photocurrent, an enhancement of the tunnelling current was clearly observed when an external electric field was applied.

AB - The introduction of quantum dot (QD) or quantum ring (QR) nanostructures into GaAs single-junction solar cells has shown enhanced photo-response above the GaAs absorption edge, because of sub-bandgap photon absorption. However, to further improve solar cell performance a better understanding of the mechanisms of photogenerated carrier extraction from QDs and QRs is needed. In this work we have used a direct excitation technique to study type II GaSb/GaAs quantum ring solar cells using a 1064 nm infrared laser, which enables us to excite electron-hole pairs directly within the GaSb QRs without exciting the GaAs host material. Temperature and laser intensity dependence of the current-voltage characteristics revealed that the thermionic emission process produced the dominant contribution to the photocurrent and accounts for 98.9% of total photocurrent at 0 V and 300 K. Although the tunnelling process gives only a low contribution to the photocurrent, an enhancement of the tunnelling current was clearly observed when an external electric field was applied.

U2 - 10.1088/0268-1242/29/3/035014

DO - 10.1088/0268-1242/29/3/035014

M3 - Journal article

VL - 29

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 3

M1 - 035014

ER -