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Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.

Research output: Contribution to journalJournal article

Published

  • O. Drachenko
  • A. Patane
  • N. V. Kozlova
  • Q. Zhuang
  • A. Krier
  • L. Eaves
  • M. Helm
  • EU Contract No. RII3-CT-2004-506239 (Funder)
  • DFG Grant Nos. DR832/3-1 (Funder)
  • DFG KO 3743/1-1 (Funder)
  • AOBJ: 550341 (Funder)
Journal publication date04/2011
JournalApplied Physics Letters
Journal number16
Volume98
Pages162109
Original languageEnglish

Abstract

We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics.