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Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.

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Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. / Drachenko, O.; Patane, A.; Kozlova, N. V.; Zhuang, Q.; Krier, A.; Eaves, L.; Helm, M.; EU Contract No. RII3-CT-2004-506239 (Funder); DFG Grant Nos. DR832/3-1 (Funder); DFG KO 3743/1-1 (Funder); AOBJ: 550341 (Funder).

In: Applied Physics Letters, Vol. 98, No. 16, 04.2011, p. 162109.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Drachenko, O, Patane, A, Kozlova, NV, Zhuang, Q, Krier, A, Eaves, L, Helm, M, EU Contract No. RII3-CT-2004-506239 (Funder), DFG Grant Nos. DR832/3-1 (Funder), DFG KO 3743/1-1 (Funder) & AOBJ: 550341 (Funder) 2011, 'Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.', Applied Physics Letters, vol. 98, no. 16, pp. 162109. <http://apl.aip.org/resource/1/applab/v98/i16/p162109_s1>

APA

Drachenko, O., Patane, A., Kozlova, N. V., Zhuang, Q., Krier, A., Eaves, L., Helm, M., EU Contract No. RII3-CT-2004-506239 (Funder), DFG Grant Nos. DR832/3-1 (Funder), DFG KO 3743/1-1 (Funder), & AOBJ: 550341 (Funder) (2011). Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. Applied Physics Letters, 98(16), 162109. http://apl.aip.org/resource/1/applab/v98/i16/p162109_s1

Vancouver

Drachenko O, Patane A, Kozlova NV, Zhuang Q, Krier A, Eaves L et al. Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. Applied Physics Letters. 2011 Apr;98(16):162109.

Author

Drachenko, O. ; Patane, A. ; Kozlova, N. V. ; Zhuang, Q. ; Krier, A. ; Eaves, L. ; Helm, M. ; EU Contract No. RII3-CT-2004-506239 (Funder) ; DFG Grant Nos. DR832/3-1 (Funder) ; DFG KO 3743/1-1 (Funder) ; AOBJ: 550341 (Funder). / Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. In: Applied Physics Letters. 2011 ; Vol. 98, No. 16. pp. 162109.

Bibtex

@article{cffe53bd49844796b21850288c229f37,
title = "Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.",
abstract = "We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics.",
author = "O. Drachenko and A. Patane and Kozlova, {N. V.} and Q. Zhuang and A. Krier and L. Eaves and M. Helm and {EU Contract No. RII3-CT-2004-506239 (Funder)} and {DFG Grant Nos. DR832/3-1 (Funder)} and {DFG KO 3743/1-1 (Funder)} and {AOBJ: 550341 (Funder)}",
year = "2011",
month = apr,
language = "English",
volume = "98",
pages = "162109",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "16",

}

RIS

TY - JOUR

T1 - Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.

AU - Drachenko, O.

AU - Patane, A.

AU - Kozlova, N. V.

AU - Zhuang, Q.

AU - Krier, A.

AU - Eaves, L.

AU - Helm, M.

AU - EU Contract No. RII3-CT-2004-506239 (Funder)

AU - DFG Grant Nos. DR832/3-1 (Funder)

AU - DFG KO 3743/1-1 (Funder)

AU - AOBJ: 550341 (Funder)

PY - 2011/4

Y1 - 2011/4

N2 - We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics.

AB - We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics.

M3 - Journal article

VL - 98

SP - 162109

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -