TY - JOUR

T1 - Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.

AU - Drachenko, O.

AU - Patane, A.

AU - Kozlova, N. V.

AU - Zhuang, Q.

AU - Krier, A.

AU - Eaves, L.

AU - Helm, M.

AU - EU Contract No. RII3-CT-2004-506239 (Funder)

AU - DFG Grant Nos. DR832/3-1 (Funder)

AU - DFG KO 3743/1-1 (Funder)

AU - AOBJ: 550341 (Funder)

PY - 2011/4

Y1 - 2011/4

N2 - We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics.

AB - We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics.

M3 - Journal article

VL - 98

SP - 162109

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 16

ER -