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Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.

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Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. / Drachenko, O.; Patane, A.; Kozlova, N. V.; Zhuang, Q.; Krier, A.; Eaves, L.; Helm, M.; EU Contract No. RII3-CT-2004-506239 (Funder); DFG Grant Nos. DR832/3-1 (Funder); DFG KO 3743/1-1 (Funder); AOBJ: 550341 (Funder).

In: Applied Physics Letters, Vol. 98, No. 16, 04.2011, p. 162109.

Research output: Contribution to journalJournal article

Harvard

Drachenko, O, Patane, A, Kozlova, NV, Zhuang, Q, Krier, A, Eaves, L, Helm, M, EU Contract No. RII3-CT-2004-506239 (Funder), DFG Grant Nos. DR832/3-1 (Funder), DFG KO 3743/1-1 (Funder) & AOBJ: 550341 (Funder) 2011, 'Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.', Applied Physics Letters, vol. 98, no. 16, pp. 162109.

APA

Drachenko, O., Patane, A., Kozlova, N. V., Zhuang, Q., Krier, A., Eaves, L., Helm, M., EU Contract No. RII3-CT-2004-506239 (Funder), DFG Grant Nos. DR832/3-1 (Funder), DFG KO 3743/1-1 (Funder), & AOBJ: 550341 (Funder) (2011). Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. Applied Physics Letters, 98(16), 162109.

Vancouver

Drachenko O, Patane A, Kozlova NV, Zhuang Q, Krier A, Eaves L et al. Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. Applied Physics Letters. 2011 Apr;98(16):162109.

Author

Drachenko, O. ; Patane, A. ; Kozlova, N. V. ; Zhuang, Q. ; Krier, A. ; Eaves, L. ; Helm, M. ; EU Contract No. RII3-CT-2004-506239 (Funder) ; DFG Grant Nos. DR832/3-1 (Funder) ; DFG KO 3743/1-1 (Funder) ; AOBJ: 550341 (Funder). / Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. In: Applied Physics Letters. 2011 ; Vol. 98, No. 16. pp. 162109.

Bibtex

@article{cffe53bd49844796b21850288c229f37,
title = "Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.",
abstract = "We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics.",
author = "O. Drachenko and A. Patane and Kozlova, {N. V.} and Q. Zhuang and A. Krier and L. Eaves and M. Helm and {EU Contract No. RII3-CT-2004-506239 (Funder)} and {DFG Grant Nos. DR832/3-1 (Funder)} and {DFG KO 3743/1-1 (Funder)} and {AOBJ: 550341 (Funder)}",
year = "2011",
month = apr
language = "English",
volume = "98",
pages = "162109",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "16",

}

RIS

TY - JOUR

T1 - Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.

AU - Drachenko, O.

AU - Patane, A.

AU - Kozlova, N. V.

AU - Zhuang, Q.

AU - Krier, A.

AU - Eaves, L.

AU - Helm, M.

AU - EU Contract No. RII3-CT-2004-506239 (Funder)

AU - DFG Grant Nos. DR832/3-1 (Funder)

AU - DFG KO 3743/1-1 (Funder)

AU - AOBJ: 550341 (Funder)

PY - 2011/4

Y1 - 2011/4

N2 - We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics.

AB - We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics.

M3 - Journal article

VL - 98

SP - 162109

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -