12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Dependence of quantum-dot formation on substrat...
View graph of relations

« Back

Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence

Research output: Contribution to journalJournal article

Published

  • Jochen Maes
  • M Hayne
  • Victor V Moshchalkov
  • Amalia Patane
  • Mohamed Henini
  • Laurence Eaves
  • Peter C Main
Journal publication date19/08/2002
JournalApplied Physics Letters
Journal number8
Volume81
Number of pages3
Pages1480-1482
Original languageEnglish

Abstract

We have investigated the substrate orientation-dependence of InAs/GaAs quantum dot growth by photoluminescence spectroscopy in very high magnetic fields. An abrupt change from one-dimensional to three-dimensional charge confinement is observed for InAs deposited on (100) GaAs. On the tilted (311)B substrates, the quantum dot morphology is different, resulting in a weaker charge confinement that gradually increases with the amount of deposited InAs. At 1.9 monolayers, the quantum-dot confinement on this substrate orientation is as effective as for the (100) oriented substrates. By studying the confinement of the charges in samples with quantum dots at different stages of development, we are able to give insight into the quantum-dot formation process. (C) 2002 American Institute of Physics.

Bibliographic note

(C) 2002 American Institute of Physics.