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Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence

Research output: Contribution to journalJournal article

Published
  • Jochen Maes
  • M Hayne
  • Victor V Moshchalkov
  • Amalia Patane
  • Mohamed Henini
  • Laurence Eaves
  • Peter C Main
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<mark>Journal publication date</mark>19/08/2002
<mark>Journal</mark>Applied Physics Letters
Issue number8
Volume81
Number of pages3
Pages (from-to)1480-1482
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

We have investigated the substrate orientation-dependence of InAs/GaAs quantum dot growth by photoluminescence spectroscopy in very high magnetic fields. An abrupt change from one-dimensional to three-dimensional charge confinement is observed for InAs deposited on (100) GaAs. On the tilted (311)B substrates, the quantum dot morphology is different, resulting in a weaker charge confinement that gradually increases with the amount of deposited InAs. At 1.9 monolayers, the quantum-dot confinement on this substrate orientation is as effective as for the (100) oriented substrates. By studying the confinement of the charges in samples with quantum dots at different stages of development, we are able to give insight into the quantum-dot formation process. (C) 2002 American Institute of Physics.

Bibliographic note

(C) 2002 American Institute of Physics.