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Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence

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Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence. / Maes, Jochen; Hayne, M ; Moshchalkov, Victor V et al.
In: Applied Physics Letters, Vol. 81, No. 8, 19.08.2002, p. 1480-1482.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Maes, J, Hayne, M, Moshchalkov, VV, Patane, A, Henini, M, Eaves, L & Main, PC 2002, 'Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence', Applied Physics Letters, vol. 81, no. 8, pp. 1480-1482. https://doi.org/10.1063/1.1501160

APA

Maes, J., Hayne, M., Moshchalkov, V. V., Patane, A., Henini, M., Eaves, L., & Main, P. C. (2002). Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence. Applied Physics Letters, 81(8), 1480-1482. https://doi.org/10.1063/1.1501160

Vancouver

Maes J, Hayne M, Moshchalkov VV, Patane A, Henini M, Eaves L et al. Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence. Applied Physics Letters. 2002 Aug 19;81(8):1480-1482. doi: 10.1063/1.1501160

Author

Maes, Jochen ; Hayne, M ; Moshchalkov, Victor V et al. / Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence. In: Applied Physics Letters. 2002 ; Vol. 81, No. 8. pp. 1480-1482.

Bibtex

@article{7fb891df74e647f0913bfbd09d45575b,
title = "Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence",
abstract = "We have investigated the substrate orientation-dependence of InAs/GaAs quantum dot growth by photoluminescence spectroscopy in very high magnetic fields. An abrupt change from one-dimensional to three-dimensional charge confinement is observed for InAs deposited on (100) GaAs. On the tilted (311)B substrates, the quantum dot morphology is different, resulting in a weaker charge confinement that gradually increases with the amount of deposited InAs. At 1.9 monolayers, the quantum-dot confinement on this substrate orientation is as effective as for the (100) oriented substrates. By studying the confinement of the charges in samples with quantum dots at different stages of development, we are able to give insight into the quantum-dot formation process. (C) 2002 American Institute of Physics.",
keywords = "HETEROSTRUCTURES, RECONSTRUCTION, ELECTRON, SURFACE",
author = "Jochen Maes and M Hayne and Moshchalkov, {Victor V} and Amalia Patane and Mohamed Henini and Laurence Eaves and Main, {Peter C}",
note = "(C) 2002 American Institute of Physics.",
year = "2002",
month = aug,
day = "19",
doi = "10.1063/1.1501160",
language = "English",
volume = "81",
pages = "1480--1482",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "8",

}

RIS

TY - JOUR

T1 - Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence

AU - Maes, Jochen

AU - Hayne, M

AU - Moshchalkov, Victor V

AU - Patane, Amalia

AU - Henini, Mohamed

AU - Eaves, Laurence

AU - Main, Peter C

N1 - (C) 2002 American Institute of Physics.

PY - 2002/8/19

Y1 - 2002/8/19

N2 - We have investigated the substrate orientation-dependence of InAs/GaAs quantum dot growth by photoluminescence spectroscopy in very high magnetic fields. An abrupt change from one-dimensional to three-dimensional charge confinement is observed for InAs deposited on (100) GaAs. On the tilted (311)B substrates, the quantum dot morphology is different, resulting in a weaker charge confinement that gradually increases with the amount of deposited InAs. At 1.9 monolayers, the quantum-dot confinement on this substrate orientation is as effective as for the (100) oriented substrates. By studying the confinement of the charges in samples with quantum dots at different stages of development, we are able to give insight into the quantum-dot formation process. (C) 2002 American Institute of Physics.

AB - We have investigated the substrate orientation-dependence of InAs/GaAs quantum dot growth by photoluminescence spectroscopy in very high magnetic fields. An abrupt change from one-dimensional to three-dimensional charge confinement is observed for InAs deposited on (100) GaAs. On the tilted (311)B substrates, the quantum dot morphology is different, resulting in a weaker charge confinement that gradually increases with the amount of deposited InAs. At 1.9 monolayers, the quantum-dot confinement on this substrate orientation is as effective as for the (100) oriented substrates. By studying the confinement of the charges in samples with quantum dots at different stages of development, we are able to give insight into the quantum-dot formation process. (C) 2002 American Institute of Physics.

KW - HETEROSTRUCTURES

KW - RECONSTRUCTION

KW - ELECTRON

KW - SURFACE

U2 - 10.1063/1.1501160

DO - 10.1063/1.1501160

M3 - Journal article

VL - 81

SP - 1480

EP - 1482

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 8

ER -