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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence
AU - Maes, Jochen
AU - Hayne, M
AU - Moshchalkov, Victor V
AU - Patane, Amalia
AU - Henini, Mohamed
AU - Eaves, Laurence
AU - Main, Peter C
N1 - (C) 2002 American Institute of Physics.
PY - 2002/8/19
Y1 - 2002/8/19
N2 - We have investigated the substrate orientation-dependence of InAs/GaAs quantum dot growth by photoluminescence spectroscopy in very high magnetic fields. An abrupt change from one-dimensional to three-dimensional charge confinement is observed for InAs deposited on (100) GaAs. On the tilted (311)B substrates, the quantum dot morphology is different, resulting in a weaker charge confinement that gradually increases with the amount of deposited InAs. At 1.9 monolayers, the quantum-dot confinement on this substrate orientation is as effective as for the (100) oriented substrates. By studying the confinement of the charges in samples with quantum dots at different stages of development, we are able to give insight into the quantum-dot formation process. (C) 2002 American Institute of Physics.
AB - We have investigated the substrate orientation-dependence of InAs/GaAs quantum dot growth by photoluminescence spectroscopy in very high magnetic fields. An abrupt change from one-dimensional to three-dimensional charge confinement is observed for InAs deposited on (100) GaAs. On the tilted (311)B substrates, the quantum dot morphology is different, resulting in a weaker charge confinement that gradually increases with the amount of deposited InAs. At 1.9 monolayers, the quantum-dot confinement on this substrate orientation is as effective as for the (100) oriented substrates. By studying the confinement of the charges in samples with quantum dots at different stages of development, we are able to give insight into the quantum-dot formation process. (C) 2002 American Institute of Physics.
KW - HETEROSTRUCTURES
KW - RECONSTRUCTION
KW - ELECTRON
KW - SURFACE
U2 - 10.1063/1.1501160
DO - 10.1063/1.1501160
M3 - Journal article
VL - 81
SP - 1480
EP - 1482
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 1077-3118
IS - 8
ER -