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Design considerations for In0.52Al0.48As based avalanche photodiodes

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

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Design considerations for In0.52Al0.48As based avalanche photodiodes. / Mun, S. C. Liew Tat; Tan, C. H.; Marshall, A. R. J. et al.
20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008. . New York: IEEE, 2008. p. 331-333.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Mun, SCLT, Tan, CH, Marshall, ARJ, Goh, YL, Tan, LJJ & David, JPR 2008, Design considerations for In0.52Al0.48As based avalanche photodiodes. in 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008. . IEEE, New York, pp. 331-333, 20th International Conference on Indium Phosphide and Related Materials, Versailles, 25/05/08. https://doi.org/10.1109/ICIPRM.2008.4702983

APA

Mun, S. C. L. T., Tan, C. H., Marshall, A. R. J., Goh, Y. L., Tan, L. J. J., & David, J. P. R. (2008). Design considerations for In0.52Al0.48As based avalanche photodiodes. In 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008. (pp. 331-333). IEEE. https://doi.org/10.1109/ICIPRM.2008.4702983

Vancouver

Mun SCLT, Tan CH, Marshall ARJ, Goh YL, Tan LJJ, David JPR. Design considerations for In0.52Al0.48As based avalanche photodiodes. In 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008. . New York: IEEE. 2008. p. 331-333 doi: 10.1109/ICIPRM.2008.4702983

Author

Mun, S. C. Liew Tat ; Tan, C. H. ; Marshall, A. R. J. et al. / Design considerations for In0.52Al0.48As based avalanche photodiodes. 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008. . New York : IEEE, 2008. pp. 331-333

Bibtex

@inproceedings{a05112a2d1b24ca19930ab3f53553790,
title = "Design considerations for In0.52Al0.48As based avalanche photodiodes",
abstract = "We provide a set of design considerations for In0.52Al0.48As based avalanche photodiodes (APDs) in an attempt to reduce the excess noise factor. We compared the effects of tapered electric fields to constant electric fields, in APDs with avalanche regions of 0.2 mu m and 2.0 mu m, on multiplication and excess noise factors using a Simple Monte Carlo model. We found that diodes having p(+)-n-n(+) doping profiles produce the lowest and highest excess noise in diodes with avalanche regions of 0.2 mu m and 2.0 mu m respectively. However due to the higher peak electric fields in thin diodes with field gradients causing tunneling current to become significant, the ideal p(+)-i-n(+) diodes still provide the overall preferred structure. We also observed that different electric field gradients in the p(+) cladding regions have negligible effect on the excess noise factors.",
keywords = "In0.52Al0.48As , Monte Carlo modeling , avalanche photodiodes , excess noise factor , impact ionization",
author = "Mun, {S. C. Liew Tat} and Tan, {C. H.} and Marshall, {A. R. J.} and Goh, {Y. L.} and Tan, {L. J. J.} and David, {J. P. R.}",
year = "2008",
doi = "10.1109/ICIPRM.2008.4702983",
language = "English",
isbn = "9781424422586",
pages = "331--333",
booktitle = "20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008.",
publisher = "IEEE",
note = "20th International Conference on Indium Phosphide and Related Materials ; Conference date: 25-05-2008 Through 29-05-2008",

}

RIS

TY - GEN

T1 - Design considerations for In0.52Al0.48As based avalanche photodiodes

AU - Mun, S. C. Liew Tat

AU - Tan, C. H.

AU - Marshall, A. R. J.

AU - Goh, Y. L.

AU - Tan, L. J. J.

AU - David, J. P. R.

PY - 2008

Y1 - 2008

N2 - We provide a set of design considerations for In0.52Al0.48As based avalanche photodiodes (APDs) in an attempt to reduce the excess noise factor. We compared the effects of tapered electric fields to constant electric fields, in APDs with avalanche regions of 0.2 mu m and 2.0 mu m, on multiplication and excess noise factors using a Simple Monte Carlo model. We found that diodes having p(+)-n-n(+) doping profiles produce the lowest and highest excess noise in diodes with avalanche regions of 0.2 mu m and 2.0 mu m respectively. However due to the higher peak electric fields in thin diodes with field gradients causing tunneling current to become significant, the ideal p(+)-i-n(+) diodes still provide the overall preferred structure. We also observed that different electric field gradients in the p(+) cladding regions have negligible effect on the excess noise factors.

AB - We provide a set of design considerations for In0.52Al0.48As based avalanche photodiodes (APDs) in an attempt to reduce the excess noise factor. We compared the effects of tapered electric fields to constant electric fields, in APDs with avalanche regions of 0.2 mu m and 2.0 mu m, on multiplication and excess noise factors using a Simple Monte Carlo model. We found that diodes having p(+)-n-n(+) doping profiles produce the lowest and highest excess noise in diodes with avalanche regions of 0.2 mu m and 2.0 mu m respectively. However due to the higher peak electric fields in thin diodes with field gradients causing tunneling current to become significant, the ideal p(+)-i-n(+) diodes still provide the overall preferred structure. We also observed that different electric field gradients in the p(+) cladding regions have negligible effect on the excess noise factors.

KW - In0.52Al0.48As

KW - Monte Carlo modeling

KW - avalanche photodiodes

KW - excess noise factor

KW - impact ionization

U2 - 10.1109/ICIPRM.2008.4702983

DO - 10.1109/ICIPRM.2008.4702983

M3 - Conference contribution/Paper

SN - 9781424422586

SP - 331

EP - 333

BT - 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008.

PB - IEEE

CY - New York

T2 - 20th International Conference on Indium Phosphide and Related Materials

Y2 - 25 May 2008 through 29 May 2008

ER -