Research output: Contribution to journal › Journal article
|<mark>Journal publication date</mark>||09/2012|
|<mark>Journal</mark>||Semiconductor Science and Technology|
|Number of pages||8|
The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the 3-4 mu m spectral range is described. The dilute nitrides are found to offer improved temperature stability of the photon emission. This arises from localization effects and reduced non-radiative Auger recombination.