12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Development of dilute nitride materials for mid...
View graph of relations

« Back

Development of dilute nitride materials for mid-infrared diode lasers

Research output: Contribution to journalJournal article

Published

???articleNumber???094009
Journal publication date09/2012
JournalSemiconductor Science and Technology
Journal number9
Volume27
Number of pages8
Original languageEnglish

Abstract

The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the 3-4 mu m spectral range is described. The dilute nitrides are found to offer improved temperature stability of the photon emission. This arises from localization effects and reduced non-radiative Auger recombination.