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Development of dilute nitride materials for mid-infrared diode lasers

Research output: Contribution to journalJournal article


Article number094009
<mark>Journal publication date</mark>09/2012
<mark>Journal</mark>Semiconductor Science and Technology
Issue number9
Number of pages8
<mark>Original language</mark>English


The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the 3-4 mu m spectral range is described. The dilute nitrides are found to offer improved temperature stability of the photon emission. This arises from localization effects and reduced non-radiative Auger recombination.