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Development of dilute nitride materials for mid-infrared diode lasers

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Development of dilute nitride materials for mid-infrared diode lasers. / Krier, A.; de la Mare, M.; Carrington, P. J.; Thompson, M.; Zhuang, Q.; Patane, A.; Kudrawiec, R.

In: Semiconductor Science and Technology, Vol. 27, No. 9, 094009 , 09.2012.

Research output: Contribution to journalJournal article

Harvard

Krier, A, de la Mare, M, Carrington, PJ, Thompson, M, Zhuang, Q, Patane, A & Kudrawiec, R 2012, 'Development of dilute nitride materials for mid-infrared diode lasers', Semiconductor Science and Technology, vol. 27, no. 9, 094009 . https://doi.org/10.1088/0268-1242/27/9/094009

APA

Krier, A., de la Mare, M., Carrington, P. J., Thompson, M., Zhuang, Q., Patane, A., & Kudrawiec, R. (2012). Development of dilute nitride materials for mid-infrared diode lasers. Semiconductor Science and Technology, 27(9), [094009 ]. https://doi.org/10.1088/0268-1242/27/9/094009

Vancouver

Author

Krier, A. ; de la Mare, M. ; Carrington, P. J. ; Thompson, M. ; Zhuang, Q. ; Patane, A. ; Kudrawiec, R. / Development of dilute nitride materials for mid-infrared diode lasers. In: Semiconductor Science and Technology. 2012 ; Vol. 27, No. 9.

Bibtex

@article{1e49269eb13747a585ab868dff5f1ba6,
title = "Development of dilute nitride materials for mid-infrared diode lasers",
abstract = "The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the 3-4 mu m spectral range is described. The dilute nitrides are found to offer improved temperature stability of the photon emission. This arises from localization effects and reduced non-radiative Auger recombination.",
keywords = "INASN, BAND-STRUCTURE, PHOTOLUMINESCENCE, SPECTROSCOPY, OPTICAL-PROPERTIES, MOLECULAR-BEAM EPITAXY, GAAS(001), MBE GROWTH, NITROGEN, ALLOYS",
author = "A. Krier and {de la Mare}, M. and Carrington, {P. J.} and M. Thompson and Q. Zhuang and A. Patane and R. Kudrawiec",
year = "2012",
month = sep,
doi = "10.1088/0268-1242/27/9/094009",
language = "English",
volume = "27",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "9",

}

RIS

TY - JOUR

T1 - Development of dilute nitride materials for mid-infrared diode lasers

AU - Krier, A.

AU - de la Mare, M.

AU - Carrington, P. J.

AU - Thompson, M.

AU - Zhuang, Q.

AU - Patane, A.

AU - Kudrawiec, R.

PY - 2012/9

Y1 - 2012/9

N2 - The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the 3-4 mu m spectral range is described. The dilute nitrides are found to offer improved temperature stability of the photon emission. This arises from localization effects and reduced non-radiative Auger recombination.

AB - The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the 3-4 mu m spectral range is described. The dilute nitrides are found to offer improved temperature stability of the photon emission. This arises from localization effects and reduced non-radiative Auger recombination.

KW - INASN

KW - BAND-STRUCTURE

KW - PHOTOLUMINESCENCE

KW - SPECTROSCOPY

KW - OPTICAL-PROPERTIES

KW - MOLECULAR-BEAM EPITAXY

KW - GAAS(001)

KW - MBE GROWTH

KW - NITROGEN

KW - ALLOYS

U2 - 10.1088/0268-1242/27/9/094009

DO - 10.1088/0268-1242/27/9/094009

M3 - Journal article

VL - 27

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 9

M1 - 094009

ER -