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Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE

Research output: Contribution in Book/Report/ProceedingsConference contribution

Published
Publication date2008
Host publicationNARROW GAP SEMICONDUCTORS 2007
EditorsBN Murdin, S Clowes
Place of PublicationDORDRECHT
PublisherSpringer
Pages69-72
Number of pages4
ISBN (Print)978-1-4020-8424-9
<mark>Original language</mark>English
Event13th International Conference on Narrow Gap Semiconductors - Guildford

Conference

Conference13th International Conference on Narrow Gap Semiconductors
CityGuildford
Period8/07/0712/07/07

Conference

Conference13th International Conference on Narrow Gap Semiconductors
CityGuildford
Period8/07/0712/07/07

Abstract

InAsSb/InAsSbP double heterojunction lasers have been grown by liquid phase epitaxy in which free carrier absorption loss was investigated and minimized by the introduction of two undoped quaternary layers on either side of the active region. The diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 mu m with a threshold current density as low as 118 A/cm(2) at 85 K. Compared to the conventional 3-layer DH laser, reducing the optical loss increases the maximum lasing temperature by 95 K to similar to 210 K in the optimized 5-layer structure.