Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
}
TY - GEN
T1 - Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE
AU - Yin, M.
AU - Krier, A.
AU - Carrington, P. J.
AU - Jones, Robert
AU - Krier, S. E.
PY - 2008
Y1 - 2008
N2 - InAsSb/InAsSbP double heterojunction lasers have been grown by liquid phase epitaxy in which free carrier absorption loss was investigated and minimized by the introduction of two undoped quaternary layers on either side of the active region. The diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 mu m with a threshold current density as low as 118 A/cm(2) at 85 K. Compared to the conventional 3-layer DH laser, reducing the optical loss increases the maximum lasing temperature by 95 K to similar to 210 K in the optimized 5-layer structure.
AB - InAsSb/InAsSbP double heterojunction lasers have been grown by liquid phase epitaxy in which free carrier absorption loss was investigated and minimized by the introduction of two undoped quaternary layers on either side of the active region. The diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 mu m with a threshold current density as low as 118 A/cm(2) at 85 K. Compared to the conventional 3-layer DH laser, reducing the optical loss increases the maximum lasing temperature by 95 K to similar to 210 K in the optimized 5-layer structure.
M3 - Conference contribution/Paper
SN - 978-1-4020-8424-9
SP - 69
EP - 72
BT - NARROW GAP SEMICONDUCTORS 2007
A2 - Murdin, BN
A2 - Clowes, S
PB - Springer
CY - DORDRECHT
T2 - 13th International Conference on Narrow Gap Semiconductors
Y2 - 8 July 2007 through 12 July 2007
ER -