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Effect of matrix on InAs self-organized nanostructures on InP substrate

Research output: Contribution in Book/Report/ProceedingsChapter

Published

Publication date2000
Host publicationProceedings Conference on Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000.
EditorsLeonard D. Broekman , Brian F. Usher, John D. Riley
PublisherIEEE
Pages455-458
Number of pages4
ISBN (Print)0780366980 , 9780780366985
Original languageEnglish

Abstract

We report the influence of the matrix in InAs nanostructures grown on InP[001] substrates by solid source molecular beam epitaxy. Three buffers of InGaAs, InAlAs, and InP lattice matched on InP have been studied. Differences in nanostructure morphology have been evaluated by atomic force microscopy and by low-temperature photoluminescence measurements. We have observed quantum wire formation in the InAs/InGaAs and InAs/InAlAs system, while quantum dots with bimodal size distribution appeared in the InAs/InP system. The observed drastic modification of nanostructures is attributed to the anisotropic buffer layer surface, and the bimodal size distribution of InAs quantum dots on InP buffer is simply explained by the surface mass transfer.