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Effect of matrix on InAs self-organized nanostructures on InP substrate

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Effect of matrix on InAs self-organized nanostructures on InP substrate. / Zhuang, Qiandong; Yoon, S. F.; Zheng, H. Q.

Proceedings Conference on Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. . ed. / Leonard D. Broekman ; Brian F. Usher; John D. Riley. IEEE, 2000. p. 455-458.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter

Harvard

Zhuang, Q, Yoon, SF & Zheng, HQ 2000, Effect of matrix on InAs self-organized nanostructures on InP substrate. in LD Broekman , BF Usher & JD Riley (eds), Proceedings Conference on Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. . IEEE, pp. 455-458. https://doi.org/10.1109/COMMAD.2000.1022988

APA

Zhuang, Q., Yoon, S. F., & Zheng, H. Q. (2000). Effect of matrix on InAs self-organized nanostructures on InP substrate. In L. D. Broekman , B. F. Usher, & J. D. Riley (Eds.), Proceedings Conference on Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. (pp. 455-458). IEEE. https://doi.org/10.1109/COMMAD.2000.1022988

Vancouver

Zhuang Q, Yoon SF, Zheng HQ. Effect of matrix on InAs self-organized nanostructures on InP substrate. In Broekman LD, Usher BF, Riley JD, editors, Proceedings Conference on Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. . IEEE. 2000. p. 455-458 https://doi.org/10.1109/COMMAD.2000.1022988

Author

Zhuang, Qiandong ; Yoon, S. F. ; Zheng, H. Q. / Effect of matrix on InAs self-organized nanostructures on InP substrate. Proceedings Conference on Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. . editor / Leonard D. Broekman ; Brian F. Usher ; John D. Riley. IEEE, 2000. pp. 455-458

Bibtex

@inbook{9553dd24a4fe476ab8e5349904e514d2,
title = "Effect of matrix on InAs self-organized nanostructures on InP substrate",
abstract = "We report the influence of the matrix in InAs nanostructures grown on InP[001] substrates by solid source molecular beam epitaxy. Three buffers of InGaAs, InAlAs, and InP lattice matched on InP have been studied. Differences in nanostructure morphology have been evaluated by atomic force microscopy and by low-temperature photoluminescence measurements. We have observed quantum wire formation in the InAs/InGaAs and InAs/InAlAs system, while quantum dots with bimodal size distribution appeared in the InAs/InP system. The observed drastic modification of nanostructures is attributed to the anisotropic buffer layer surface, and the bimodal size distribution of InAs quantum dots on InP buffer is simply explained by the surface mass transfer.",
author = "Qiandong Zhuang and Yoon, {S. F.} and Zheng, {H. Q.}",
year = "2000",
doi = "10.1109/COMMAD.2000.1022988",
language = "English",
isbn = "0780366980 ",
pages = "455--458",
editor = "{Broekman }, {Leonard D.} and Usher, {Brian F.} and Riley, {John D.}",
booktitle = "Proceedings Conference on Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000.",
publisher = "IEEE",

}

RIS

TY - CHAP

T1 - Effect of matrix on InAs self-organized nanostructures on InP substrate

AU - Zhuang, Qiandong

AU - Yoon, S. F.

AU - Zheng, H. Q.

PY - 2000

Y1 - 2000

N2 - We report the influence of the matrix in InAs nanostructures grown on InP[001] substrates by solid source molecular beam epitaxy. Three buffers of InGaAs, InAlAs, and InP lattice matched on InP have been studied. Differences in nanostructure morphology have been evaluated by atomic force microscopy and by low-temperature photoluminescence measurements. We have observed quantum wire formation in the InAs/InGaAs and InAs/InAlAs system, while quantum dots with bimodal size distribution appeared in the InAs/InP system. The observed drastic modification of nanostructures is attributed to the anisotropic buffer layer surface, and the bimodal size distribution of InAs quantum dots on InP buffer is simply explained by the surface mass transfer.

AB - We report the influence of the matrix in InAs nanostructures grown on InP[001] substrates by solid source molecular beam epitaxy. Three buffers of InGaAs, InAlAs, and InP lattice matched on InP have been studied. Differences in nanostructure morphology have been evaluated by atomic force microscopy and by low-temperature photoluminescence measurements. We have observed quantum wire formation in the InAs/InGaAs and InAs/InAlAs system, while quantum dots with bimodal size distribution appeared in the InAs/InP system. The observed drastic modification of nanostructures is attributed to the anisotropic buffer layer surface, and the bimodal size distribution of InAs quantum dots on InP buffer is simply explained by the surface mass transfer.

U2 - 10.1109/COMMAD.2000.1022988

DO - 10.1109/COMMAD.2000.1022988

M3 - Chapter

SN - 0780366980

SN - 9780780366985

SP - 455

EP - 458

BT - Proceedings Conference on Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000.

A2 - Broekman , Leonard D.

A2 - Usher, Brian F.

A2 - Riley, John D.

PB - IEEE

ER -