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Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy

Research output: Contribution to journalJournal article

Published

Journal publication date3/10/2012
JournalJournal of Physics D: Applied Physics
Journal number39
Volume45
Number of pages3
Pages395103-395105
Original languageEnglish

Abstract

We investigate the epitaxial growth of the dilute nitride InAsN alloy onto InAs and GaAs substrates with nitrogen content up to 1%. We report photoluminescence (PL) emission within the 2–4 µm spectral region and show that InAsN grown onto GaAs exhibits no degradation of the PL intensity and linewidth compared with epitaxial layers grown on near lattice-matched InAs substrates. Also, nitrogen can induce a significant reduction in the thermal quenching of the PL emission, which we attribute to the reduction in non-radiative Auger-recombination.