Home > Research > Publications & Outputs > Electron and hole confinement by type-II semico...
View graph of relations

Electron and hole confinement by type-II semiconductor nano-rings

Research output: Contribution to conference - Without ISBN/ISSN Abstract

Published
Publication date10/01/2013
Original languageEnglish
EventOne Day Quantum Dot Meeting - UCL, London, United Kingdom
Duration: 10/01/2013 → …

Conference

ConferenceOne Day Quantum Dot Meeting
CountryUnited Kingdom
CityLondon
Period10/01/13 → …

Abstract

Semiconductor nanostructures are appealing for use in applications of quantum information processing (QIP) as they provide an interface between flying- and stationary-qubits. Two significant physical limitations are present in most systems; shallow confinement requires low-temperature operation and strong interactions with their surroundings typically results in short coherence times. GaSb/GaAs structures could potentially address these, as they present a deep confining potential for holes making room-temperature operation possible, and hole-spins can be robust against dephasing . The type-II nature of this system is non-ideal, however, and has led to inferior optical properties. Here we introduce a quantum ring system grown by molecular beam epitaxy that, unusually, possesses a high material contrast between the GaSb ring and its GaAs core, as shown in figure 1a. This provides confinement for the electrons within the centre of the rings, as illustrated in figure 1b, enhancing the optical quality of the nanostructures in this system.