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Encapsulated single photon emission device

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Encapsulated single photon emission device. / Young, Robert James (Inventor); Ellis, David (Inventor); Shields, Andrew J. (Inventor); Stevenson, Mark (Inventor).

Patent No.: GB2443220. Oct 23, 2006.

Research output: Patent

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Young RJ, Ellis D, Shields AJ, Stevenson M, inventors. Encapsulated single photon emission device. GB2443220. 2006 Oct 23.

Author

Young, Robert James (Inventor) ; Ellis, David (Inventor) ; Shields, Andrew J. (Inventor) ; Stevenson, Mark (Inventor). / Encapsulated single photon emission device. Patent No.: GB2443220. Oct 23, 2006.

Bibtex

@misc{454a7756e0db4f72be1169d3e50e68b6,
title = "Encapsulated single photon emission device",
abstract = "The device comprises a quantum dot and a Bragg reflector 32 formed from III-V semiconductor layers. An encapsulating layer of SiN 36 surrounds the device layer structure which prevents desorption of semiconductor material or the electrostatic electrode pattern 37 being affected during high temperature annealing. A photonic cavity may be used to define an optical cavity and electrostatic electrodes may be used to select one quantum dot from an ensemble for device operation. The encapsulating layer may be removed to complete the device fabrication process. The device may operate by electrical or optical excitation.",
author = "Young, {Robert James} and David Ellis and Shields, {Andrew J.} and Mark Stevenson",
year = "2006",
month = oct,
day = "23",
language = "English",
type = "Patent",
note = "GB2443220; H01L33/08; H01L33/10; H01L33/14; H01L33/30; H01L33/44; B82Y20/00; H01L33/08; H01L33/105; H01L33/145; H01L33/30; H01L33/44; H01L33/0062; H01L33/0095",

}

RIS

TY - PAT

T1 - Encapsulated single photon emission device

AU - Young, Robert James

AU - Ellis, David

AU - Shields, Andrew J.

AU - Stevenson, Mark

PY - 2006/10/23

Y1 - 2006/10/23

N2 - The device comprises a quantum dot and a Bragg reflector 32 formed from III-V semiconductor layers. An encapsulating layer of SiN 36 surrounds the device layer structure which prevents desorption of semiconductor material or the electrostatic electrode pattern 37 being affected during high temperature annealing. A photonic cavity may be used to define an optical cavity and electrostatic electrodes may be used to select one quantum dot from an ensemble for device operation. The encapsulating layer may be removed to complete the device fabrication process. The device may operate by electrical or optical excitation.

AB - The device comprises a quantum dot and a Bragg reflector 32 formed from III-V semiconductor layers. An encapsulating layer of SiN 36 surrounds the device layer structure which prevents desorption of semiconductor material or the electrostatic electrode pattern 37 being affected during high temperature annealing. A photonic cavity may be used to define an optical cavity and electrostatic electrodes may be used to select one quantum dot from an ensemble for device operation. The encapsulating layer may be removed to complete the device fabrication process. The device may operate by electrical or optical excitation.

M3 - Patent

M1 - GB2443220

ER -