Research output: Contribution to journal › Journal article
|<mark>Journal publication date</mark>||07/1997|
|<mark>Journal</mark>||Microwave and Optical Technology Letters|
|Number of pages||3|
The performance of a physics-based large-signal MESFET model, previously published and experimentally validated for a gate length equal to or greater than 1 mu m, has been evaluated for the submicron case. A satisfactory agreement for both the dc characteristics and the S parameter derived from the model compared with experimental data assures the validity of the model for a 0.5-mu m gate-length MESFET process. (C) 1997 John Wiley & Sons, Inc.