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Experimental validation of a large-signal MESFET model for submicron-gate-length devices

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Experimental validation of a large-signal MESFET model for submicron-gate-length devices. / DAgostino, S ; Paoloni, C .
In: Microwave and Optical Technology Letters, Vol. 15, No. 4, 07.1997, p. 227-229.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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DAgostino S, Paoloni C. Experimental validation of a large-signal MESFET model for submicron-gate-length devices. Microwave and Optical Technology Letters. 1997 Jul;15(4):227-229. doi: 10.1002/(SICI)1098-2760(199707)15:4<227::AID-MOP11>3.0.CO;2-4

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DAgostino, S ; Paoloni, C . / Experimental validation of a large-signal MESFET model for submicron-gate-length devices. In: Microwave and Optical Technology Letters. 1997 ; Vol. 15, No. 4. pp. 227-229.

Bibtex

@article{5bbc983dfcbb437bbcc274ea7d4717ad,
title = "Experimental validation of a large-signal MESFET model for submicron-gate-length devices",
abstract = "The performance of a physics-based large-signal MESFET model, previously published and experimentally validated for a gate length equal to or greater than 1 mu m, has been evaluated for the submicron case. A satisfactory agreement for both the dc characteristics and the S parameter derived from the model compared with experimental data assures the validity of the model for a 0.5-mu m gate-length MESFET process. (C) 1997 John Wiley & Sons, Inc.",
keywords = "MMIC, MESFET, modeling",
author = "S DAgostino and C Paoloni",
year = "1997",
month = jul,
doi = "10.1002/(SICI)1098-2760(199707)15:4<227::AID-MOP11>3.0.CO;2-4",
language = "English",
volume = "15",
pages = "227--229",
journal = "Microwave and Optical Technology Letters",
issn = "0895-2477",
publisher = "John Wiley and Sons Inc.",
number = "4",

}

RIS

TY - JOUR

T1 - Experimental validation of a large-signal MESFET model for submicron-gate-length devices

AU - DAgostino, S

AU - Paoloni, C

PY - 1997/7

Y1 - 1997/7

N2 - The performance of a physics-based large-signal MESFET model, previously published and experimentally validated for a gate length equal to or greater than 1 mu m, has been evaluated for the submicron case. A satisfactory agreement for both the dc characteristics and the S parameter derived from the model compared with experimental data assures the validity of the model for a 0.5-mu m gate-length MESFET process. (C) 1997 John Wiley & Sons, Inc.

AB - The performance of a physics-based large-signal MESFET model, previously published and experimentally validated for a gate length equal to or greater than 1 mu m, has been evaluated for the submicron case. A satisfactory agreement for both the dc characteristics and the S parameter derived from the model compared with experimental data assures the validity of the model for a 0.5-mu m gate-length MESFET process. (C) 1997 John Wiley & Sons, Inc.

KW - MMIC

KW - MESFET

KW - modeling

U2 - 10.1002/(SICI)1098-2760(199707)15:4<227::AID-MOP11>3.0.CO;2-4

DO - 10.1002/(SICI)1098-2760(199707)15:4<227::AID-MOP11>3.0.CO;2-4

M3 - Journal article

VL - 15

SP - 227

EP - 229

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

IS - 4

ER -