Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 07/1997 |
|---|---|
| <mark>Journal</mark> | Microwave and Optical Technology Letters |
| Issue number | 4 |
| Volume | 15 |
| Number of pages | 3 |
| Pages (from-to) | 227-229 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
The performance of a physics-based large-signal MESFET model, previously published and experimentally validated for a gate length equal to or greater than 1 mu m, has been evaluated for the submicron case. A satisfactory agreement for both the dc characteristics and the S parameter derived from the model compared with experimental data assures the validity of the model for a 0.5-mu m gate-length MESFET process. (C) 1997 John Wiley & Sons, Inc.