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Experimental validation of a large-signal MESFET model for submicron-gate-length devices

Research output: Contribution to journalJournal articlepeer-review

<mark>Journal publication date</mark>07/1997
<mark>Journal</mark>Microwave and Optical Technology Letters
Issue number4
Number of pages3
Pages (from-to)227-229
Publication StatusPublished
<mark>Original language</mark>English


The performance of a physics-based large-signal MESFET model, previously published and experimentally validated for a gate length equal to or greater than 1 mu m, has been evaluated for the submicron case. A satisfactory agreement for both the dc characteristics and the S parameter derived from the model compared with experimental data assures the validity of the model for a 0.5-mu m gate-length MESFET process. (C) 1997 John Wiley & Sons, Inc.