Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Experimental validation of a large-signal MESFET model for submicron-gate-length devices
AU - DAgostino, S
AU - Paoloni, C
PY - 1997/7
Y1 - 1997/7
N2 - The performance of a physics-based large-signal MESFET model, previously published and experimentally validated for a gate length equal to or greater than 1 mu m, has been evaluated for the submicron case. A satisfactory agreement for both the dc characteristics and the S parameter derived from the model compared with experimental data assures the validity of the model for a 0.5-mu m gate-length MESFET process. (C) 1997 John Wiley & Sons, Inc.
AB - The performance of a physics-based large-signal MESFET model, previously published and experimentally validated for a gate length equal to or greater than 1 mu m, has been evaluated for the submicron case. A satisfactory agreement for both the dc characteristics and the S parameter derived from the model compared with experimental data assures the validity of the model for a 0.5-mu m gate-length MESFET process. (C) 1997 John Wiley & Sons, Inc.
KW - MMIC
KW - MESFET
KW - modeling
U2 - 10.1002/(SICI)1098-2760(199707)15:4<227::AID-MOP11>3.0.CO;2-4
DO - 10.1002/(SICI)1098-2760(199707)15:4<227::AID-MOP11>3.0.CO;2-4
M3 - Journal article
VL - 15
SP - 227
EP - 229
JO - Microwave and Optical Technology Letters
JF - Microwave and Optical Technology Letters
SN - 0895-2477
IS - 4
ER -