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Extremely low excess noise InAlAs avalanche photodiodes

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Extremely low excess noise InAlAs avalanche photodiodes. / Tan, C. H.; Goh, Y. L.; Marshall, A. R. J. et al.
2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings. New York: IEEE, 2007. p. 81-83.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Tan, CH, Goh, YL, Marshall, ARJ, Tan, LJJ, Ng, JS & David, JPR 2007, Extremely low excess noise InAlAs avalanche photodiodes. in 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings. IEEE, New York, pp. 81-83, 19th International Conference on Indium Phosphide and Related Materials, Matsue, 14/05/07. https://doi.org/10.1109/ICIPRM.2007.381127

APA

Tan, C. H., Goh, Y. L., Marshall, A. R. J., Tan, L. J. J., Ng, J. S., & David, J. P. R. (2007). Extremely low excess noise InAlAs avalanche photodiodes. In 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp. 81-83). IEEE. https://doi.org/10.1109/ICIPRM.2007.381127

Vancouver

Tan CH, Goh YL, Marshall ARJ, Tan LJJ, Ng JS, David JPR. Extremely low excess noise InAlAs avalanche photodiodes. In 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings. New York: IEEE. 2007. p. 81-83 doi: 10.1109/ICIPRM.2007.381127

Author

Tan, C. H. ; Goh, Y. L. ; Marshall, A. R. J. et al. / Extremely low excess noise InAlAs avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings. New York : IEEE, 2007. pp. 81-83

Bibtex

@inproceedings{1daf7cf9533149aca87427d6742d1d30,
title = "Extremely low excess noise InAlAs avalanche photodiodes",
abstract = "Excess noise factors < 4 at avalanche gain of 10 measured on a series of p(+)in(+) InAlAs diodes with avalanche regions ranging from 0.11 mu m to 2.53 mu m. Extremely low excess noise, corresponding to effective ionization coefficient ratios, k, of 0.15 < k < 0.25, showed the potential of InAlAs as multiplication region for avalanche photodiodes. Breakdown voltage obtained from multiplication characteristics of these diodes showed a linear dependence of breakdown voltage on the avalanche width. Using tunnelling parameters derived from current-voltage' measurements with the ionization coefficients and threshold energies derived from gain and excess noise measurements, our calculations showed that InAlAs avalanche photodiodes have sensitivities of similar to 28.8dBm assuming a rather high pre-amplifier noise of 15pAHz(-1/2).",
author = "Tan, {C. H.} and Goh, {Y. L.} and Marshall, {A. R. J.} and Tan, {L. J. J.} and Ng, {J. S.} and David, {J. P. R.}",
year = "2007",
doi = "10.1109/ICIPRM.2007.381127",
language = "English",
isbn = "978-1-4244-0874-0",
pages = "81--83",
booktitle = "2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings",
publisher = "IEEE",
note = "19th International Conference on Indium Phosphide and Related Materials ; Conference date: 14-05-2007 Through 18-05-2007",

}

RIS

TY - GEN

T1 - Extremely low excess noise InAlAs avalanche photodiodes

AU - Tan, C. H.

AU - Goh, Y. L.

AU - Marshall, A. R. J.

AU - Tan, L. J. J.

AU - Ng, J. S.

AU - David, J. P. R.

PY - 2007

Y1 - 2007

N2 - Excess noise factors < 4 at avalanche gain of 10 measured on a series of p(+)in(+) InAlAs diodes with avalanche regions ranging from 0.11 mu m to 2.53 mu m. Extremely low excess noise, corresponding to effective ionization coefficient ratios, k, of 0.15 < k < 0.25, showed the potential of InAlAs as multiplication region for avalanche photodiodes. Breakdown voltage obtained from multiplication characteristics of these diodes showed a linear dependence of breakdown voltage on the avalanche width. Using tunnelling parameters derived from current-voltage' measurements with the ionization coefficients and threshold energies derived from gain and excess noise measurements, our calculations showed that InAlAs avalanche photodiodes have sensitivities of similar to 28.8dBm assuming a rather high pre-amplifier noise of 15pAHz(-1/2).

AB - Excess noise factors < 4 at avalanche gain of 10 measured on a series of p(+)in(+) InAlAs diodes with avalanche regions ranging from 0.11 mu m to 2.53 mu m. Extremely low excess noise, corresponding to effective ionization coefficient ratios, k, of 0.15 < k < 0.25, showed the potential of InAlAs as multiplication region for avalanche photodiodes. Breakdown voltage obtained from multiplication characteristics of these diodes showed a linear dependence of breakdown voltage on the avalanche width. Using tunnelling parameters derived from current-voltage' measurements with the ionization coefficients and threshold energies derived from gain and excess noise measurements, our calculations showed that InAlAs avalanche photodiodes have sensitivities of similar to 28.8dBm assuming a rather high pre-amplifier noise of 15pAHz(-1/2).

U2 - 10.1109/ICIPRM.2007.381127

DO - 10.1109/ICIPRM.2007.381127

M3 - Conference contribution/Paper

SN - 978-1-4244-0874-0

SP - 81

EP - 83

BT - 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings

PB - IEEE

CY - New York

T2 - 19th International Conference on Indium Phosphide and Related Materials

Y2 - 14 May 2007 through 18 May 2007

ER -