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Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

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Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. / Marshall, Andrew R. J.; Tan, Chee Hing; David, John P. R. et al.
Optical Materials in Defence Systems Technology IV. ed. / James G. Grote; Francois Kajzar; Mikael Lindgren. Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, 2007.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Marshall, ARJ, Tan, CH, David, JPR, Ng, JS & Hopkinson, M 2007, Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. in JG Grote, F Kajzar & M Lindgren (eds), Optical Materials in Defence Systems Technology IV. SPIE-INT SOC OPTICAL ENGINEERING, Bellingham, Wash., Conference on Optical Materials in Defence Systems Technology IV, Florence, 17/09/07. https://doi.org/10.1117/12.740700

APA

Marshall, A. R. J., Tan, C. H., David, J. P. R., Ng, J. S., & Hopkinson, M. (2007). Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. In J. G. Grote, F. Kajzar, & M. Lindgren (Eds.), Optical Materials in Defence Systems Technology IV SPIE-INT SOC OPTICAL ENGINEERING. https://doi.org/10.1117/12.740700

Vancouver

Marshall ARJ, Tan CH, David JPR, Ng JS, Hopkinson M. Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. In Grote JG, Kajzar F, Lindgren M, editors, Optical Materials in Defence Systems Technology IV. Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING. 2007 doi: 10.1117/12.740700

Author

Marshall, Andrew R. J. ; Tan, Chee Hing ; David, John P. R. et al. / Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. Optical Materials in Defence Systems Technology IV. editor / James G. Grote ; Francois Kajzar ; Mikael Lindgren. Bellingham, Wash. : SPIE-INT SOC OPTICAL ENGINEERING, 2007.

Bibtex

@inproceedings{2666453458ee4a9ebe7ab002b4f1c909,
title = "Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H",
abstract = "We report the findings of work undertaken to develop InAs photodiodes with low reverse leakage current, for detection of mid-wave infrared wavelengths up to 3.5 mu m. Good quality epitaxial growth of InAs and the lattice matched ternary AlAs0.16Sb0.84 was developed using molecular beam epitaxy. A photodiode structure was designed, grown and characterized using an AlAs0.16Sb0.84 layer to block the diffusion of minority electrons. Further reductions in the reverse leakage current were achieved through studies of wet etching using a range of etchants. A sulphuric acid based etchant provided the lowest surface leakage current for a single etch step, however the surface leakage current was further reduces when a two steps etching process was employed, starting with a phosphoric acid based etchant and finishing off with a sulphuric acid based etchant. Surface profile analysis showed that higher etching rates were obtained in the direction parallel to the (100) direction. The atomic composition of the etched surface was investigated using Auger analysis. By etching a test pixel array, the potential for fabricating small pitch focal plane arrays by wet etching was evaluated.",
author = "Marshall, {Andrew R. J.} and Tan, {Chee Hing} and David, {John P. R.} and Ng, {Jo Shien} and Mark Hopkinson",
year = "2007",
month = oct,
doi = "10.1117/12.740700",
language = "English",
isbn = "978-0-8194-6898-7",
editor = "Grote, {James G.} and Francois Kajzar and Mikael Lindgren",
booktitle = "Optical Materials in Defence Systems Technology IV",
publisher = "SPIE-INT SOC OPTICAL ENGINEERING",
note = "Conference on Optical Materials in Defence Systems Technology IV ; Conference date: 17-09-2007 Through 18-09-2007",

}

RIS

TY - GEN

T1 - Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H

AU - Marshall, Andrew R. J.

AU - Tan, Chee Hing

AU - David, John P. R.

AU - Ng, Jo Shien

AU - Hopkinson, Mark

PY - 2007/10

Y1 - 2007/10

N2 - We report the findings of work undertaken to develop InAs photodiodes with low reverse leakage current, for detection of mid-wave infrared wavelengths up to 3.5 mu m. Good quality epitaxial growth of InAs and the lattice matched ternary AlAs0.16Sb0.84 was developed using molecular beam epitaxy. A photodiode structure was designed, grown and characterized using an AlAs0.16Sb0.84 layer to block the diffusion of minority electrons. Further reductions in the reverse leakage current were achieved through studies of wet etching using a range of etchants. A sulphuric acid based etchant provided the lowest surface leakage current for a single etch step, however the surface leakage current was further reduces when a two steps etching process was employed, starting with a phosphoric acid based etchant and finishing off with a sulphuric acid based etchant. Surface profile analysis showed that higher etching rates were obtained in the direction parallel to the (100) direction. The atomic composition of the etched surface was investigated using Auger analysis. By etching a test pixel array, the potential for fabricating small pitch focal plane arrays by wet etching was evaluated.

AB - We report the findings of work undertaken to develop InAs photodiodes with low reverse leakage current, for detection of mid-wave infrared wavelengths up to 3.5 mu m. Good quality epitaxial growth of InAs and the lattice matched ternary AlAs0.16Sb0.84 was developed using molecular beam epitaxy. A photodiode structure was designed, grown and characterized using an AlAs0.16Sb0.84 layer to block the diffusion of minority electrons. Further reductions in the reverse leakage current were achieved through studies of wet etching using a range of etchants. A sulphuric acid based etchant provided the lowest surface leakage current for a single etch step, however the surface leakage current was further reduces when a two steps etching process was employed, starting with a phosphoric acid based etchant and finishing off with a sulphuric acid based etchant. Surface profile analysis showed that higher etching rates were obtained in the direction parallel to the (100) direction. The atomic composition of the etched surface was investigated using Auger analysis. By etching a test pixel array, the potential for fabricating small pitch focal plane arrays by wet etching was evaluated.

U2 - 10.1117/12.740700

DO - 10.1117/12.740700

M3 - Conference contribution/Paper

SN - 978-0-8194-6898-7

BT - Optical Materials in Defence Systems Technology IV

A2 - Grote, James G.

A2 - Kajzar, Francois

A2 - Lindgren, Mikael

PB - SPIE-INT SOC OPTICAL ENGINEERING

CY - Bellingham, Wash.

T2 - Conference on Optical Materials in Defence Systems Technology IV

Y2 - 17 September 2007 through 18 September 2007

ER -