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Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

Research output: Contribution to journalJournal article

Article number031115
<mark>Journal publication date</mark>2014
<mark>Journal</mark>Applied Physics Letters
Issue number3
Number of pages3
Publication statusPublished
Original languageEnglish


There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1 μm have been demonstrated and characterized. The gain was determined to be 2.9 cm−1 per QD layer, and the waveguide loss was ∼15 cm−1 at 4 K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T0 = 101 K below 50 K, but decreased to 48 K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs0.61Sb0.13P0.26 lower cladding layer and an upper n+ InAs plasmon cladding layer which resulted in a maximum operating temperature (Tmax) of 120 K in pulsed mode, which is the highest reported to date.