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Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

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Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers. / Lu, Qi; Zhuang, Qiandong; Hayton, Jonathan et al.
In: Applied Physics Letters, Vol. 105, No. 3, 031115, 2014.

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@article{daeaa8ee32ad4561ba0b5d40aecb33ee,
title = "Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers",
abstract = "There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1 μm have been demonstrated and characterized. The gain was determined to be 2.9 cm−1 per QD layer, and the waveguide loss was ∼15 cm−1 at 4 K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T0 = 101 K below 50 K, but decreased to 48 K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs0.61Sb0.13P0.26 lower cladding layer and an upper n+ InAs plasmon cladding layer which resulted in a maximum operating temperature (Tmax) of 120 K in pulsed mode, which is the highest reported to date.",
author = "Qi Lu and Qiandong Zhuang and Jonathan Hayton and Min Yin and Anthony Krier",
year = "2014",
doi = "10.1063/1.4891636",
language = "English",
volume = "105",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "3",

}

RIS

TY - JOUR

T1 - Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

AU - Lu, Qi

AU - Zhuang, Qiandong

AU - Hayton, Jonathan

AU - Yin, Min

AU - Krier, Anthony

PY - 2014

Y1 - 2014

N2 - There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1 μm have been demonstrated and characterized. The gain was determined to be 2.9 cm−1 per QD layer, and the waveguide loss was ∼15 cm−1 at 4 K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T0 = 101 K below 50 K, but decreased to 48 K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs0.61Sb0.13P0.26 lower cladding layer and an upper n+ InAs plasmon cladding layer which resulted in a maximum operating temperature (Tmax) of 120 K in pulsed mode, which is the highest reported to date.

AB - There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1 μm have been demonstrated and characterized. The gain was determined to be 2.9 cm−1 per QD layer, and the waveguide loss was ∼15 cm−1 at 4 K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T0 = 101 K below 50 K, but decreased to 48 K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs0.61Sb0.13P0.26 lower cladding layer and an upper n+ InAs plasmon cladding layer which resulted in a maximum operating temperature (Tmax) of 120 K in pulsed mode, which is the highest reported to date.

U2 - 10.1063/1.4891636

DO - 10.1063/1.4891636

M3 - Journal article

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 031115

ER -