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GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.

Research output: Contribution to journalJournal article

Published

Journal publication date23/09/2008
JournalApplied Physics Letters
Journal number12
Volume93
Pages121106
Original languageEnglish

Abstract

Photoluminescence (PL) from GaInSb/AlInSb type I multi-quantum-wells, grown on GaAs, has been investigated as a function of strain in the quantum wells. Luminescence, between 3 and 4 mu m, was observed for all samples, with good agreement between the measured and calculated peak emission energies. Analysis of the temperature dependence of the luminescence suggests that population of excited quantum well hole subbands occurs at high temperature, leading to a reduction in the PL signal. Room temperature luminescence was obtained from a sample with similar to 0.8% strain in the quantum wells. Preliminary results from laser diodes fabricated from companion wafers indicate lasing up to 220 K. (C) 2008 American Institute of Physics.

Bibliographic note

Article number: 121106