Home > Research > Publications & Outputs > GaInSb/AlInSb multi-quantum-wells for mid-infra...

Links

Text available via DOI:

View graph of relations

GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published

Standard

GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers. / Yin, M.; Nash, G. R.; Coomber, S. D.; Buckle, L.; Carrington, P. J.; Krier, A.; Andreev, A.; Przeslak, S. J. B.; de Valicourt, G.; Smith, S. J.; Emeny, M. T.; Ashley, T.

In: Applied Physics Letters, Vol. 93, No. 12, 23.09.2008, p. 121106.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Yin, M, Nash, GR, Coomber, SD, Buckle, L, Carrington, PJ, Krier, A, Andreev, A, Przeslak, SJB, de Valicourt, G, Smith, SJ, Emeny, MT & Ashley, T 2008, 'GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.', Applied Physics Letters, vol. 93, no. 12, pp. 121106. https://doi.org/10.1063/1.2990224

APA

Yin, M., Nash, G. R., Coomber, S. D., Buckle, L., Carrington, P. J., Krier, A., Andreev, A., Przeslak, S. J. B., de Valicourt, G., Smith, S. J., Emeny, M. T., & Ashley, T. (2008). GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers. Applied Physics Letters, 93(12), 121106. https://doi.org/10.1063/1.2990224

Vancouver

Yin M, Nash GR, Coomber SD, Buckle L, Carrington PJ, Krier A et al. GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers. Applied Physics Letters. 2008 Sep 23;93(12):121106. https://doi.org/10.1063/1.2990224

Author

Yin, M. ; Nash, G. R. ; Coomber, S. D. ; Buckle, L. ; Carrington, P. J. ; Krier, A. ; Andreev, A. ; Przeslak, S. J. B. ; de Valicourt, G. ; Smith, S. J. ; Emeny, M. T. ; Ashley, T. / GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers. In: Applied Physics Letters. 2008 ; Vol. 93, No. 12. pp. 121106.

Bibtex

@article{6fc1d9c06f844086b5f50ea6f42fad1f,
title = "GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.",
abstract = "Photoluminescence (PL) from GaInSb/AlInSb type I multi-quantum-wells, grown on GaAs, has been investigated as a function of strain in the quantum wells. Luminescence, between 3 and 4 mu m, was observed for all samples, with good agreement between the measured and calculated peak emission energies. Analysis of the temperature dependence of the luminescence suggests that population of excited quantum well hole subbands occurs at high temperature, leading to a reduction in the PL signal. Room temperature luminescence was obtained from a sample with similar to 0.8% strain in the quantum wells. Preliminary results from laser diodes fabricated from companion wafers indicate lasing up to 220 K. (C) 2008 American Institute of Physics.",
author = "M. Yin and Nash, {G. R.} and Coomber, {S. D.} and L. Buckle and Carrington, {P. J.} and A. Krier and A. Andreev and Przeslak, {S. J. B.} and {de Valicourt}, G. and Smith, {S. J.} and Emeny, {M. T.} and T. Ashley",
note = "Article number: 121106",
year = "2008",
month = sep,
day = "23",
doi = "10.1063/1.2990224",
language = "English",
volume = "93",
pages = "121106",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "12",

}

RIS

TY - JOUR

T1 - GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.

AU - Yin, M.

AU - Nash, G. R.

AU - Coomber, S. D.

AU - Buckle, L.

AU - Carrington, P. J.

AU - Krier, A.

AU - Andreev, A.

AU - Przeslak, S. J. B.

AU - de Valicourt, G.

AU - Smith, S. J.

AU - Emeny, M. T.

AU - Ashley, T.

N1 - Article number: 121106

PY - 2008/9/23

Y1 - 2008/9/23

N2 - Photoluminescence (PL) from GaInSb/AlInSb type I multi-quantum-wells, grown on GaAs, has been investigated as a function of strain in the quantum wells. Luminescence, between 3 and 4 mu m, was observed for all samples, with good agreement between the measured and calculated peak emission energies. Analysis of the temperature dependence of the luminescence suggests that population of excited quantum well hole subbands occurs at high temperature, leading to a reduction in the PL signal. Room temperature luminescence was obtained from a sample with similar to 0.8% strain in the quantum wells. Preliminary results from laser diodes fabricated from companion wafers indicate lasing up to 220 K. (C) 2008 American Institute of Physics.

AB - Photoluminescence (PL) from GaInSb/AlInSb type I multi-quantum-wells, grown on GaAs, has been investigated as a function of strain in the quantum wells. Luminescence, between 3 and 4 mu m, was observed for all samples, with good agreement between the measured and calculated peak emission energies. Analysis of the temperature dependence of the luminescence suggests that population of excited quantum well hole subbands occurs at high temperature, leading to a reduction in the PL signal. Room temperature luminescence was obtained from a sample with similar to 0.8% strain in the quantum wells. Preliminary results from laser diodes fabricated from companion wafers indicate lasing up to 220 K. (C) 2008 American Institute of Physics.

U2 - 10.1063/1.2990224

DO - 10.1063/1.2990224

M3 - Journal article

VL - 93

SP - 121106

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

ER -