Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy
AU - Zhuang, Qiandong
AU - Yoon, S. F.
AU - Zheng, H. Q.
AU - Yuan, K. H.
PY - 2000
Y1 - 2000
N2 - Self-organized InAs quantum dots (QDs) on InP (1 0 0) substrate have been prepared by solid-source molecular-beam epitaxy (SSMBE). Atomic force microscopy (AFM) examination shows that the InAs QDs possess low aspect ratio (1 : 17) of height vs. diameter. The low-temperature photoluminescence (PL) behavior of the QDs is characterized by a 65 meV PL linewidth at ∼0.8 eV, with three other emissions, which correspond to the various thicknesses of InAs wetting layers. It is deduced that the InAs wetting layers exceeded the intended InAs deposition, which is attributed to unintentional As/P exchange reaction. This excess material is further confirmed by XRD measurements, and indicates that effective exchange occurs even at low temperature (500°C) for SSMBE growth. No significant change in the QD emission peak is observed in the sample grown at high temperature, indicating the absence of any significant As/P exchange reaction in the QDs.
AB - Self-organized InAs quantum dots (QDs) on InP (1 0 0) substrate have been prepared by solid-source molecular-beam epitaxy (SSMBE). Atomic force microscopy (AFM) examination shows that the InAs QDs possess low aspect ratio (1 : 17) of height vs. diameter. The low-temperature photoluminescence (PL) behavior of the QDs is characterized by a 65 meV PL linewidth at ∼0.8 eV, with three other emissions, which correspond to the various thicknesses of InAs wetting layers. It is deduced that the InAs wetting layers exceeded the intended InAs deposition, which is attributed to unintentional As/P exchange reaction. This excess material is further confirmed by XRD measurements, and indicates that effective exchange occurs even at low temperature (500°C) for SSMBE growth. No significant change in the QD emission peak is observed in the sample grown at high temperature, indicating the absence of any significant As/P exchange reaction in the QDs.
KW - InAs/InP
KW - AFM
KW - Self-organized quantum dots
KW - SSMBE
KW - PL
U2 - 10.1016/S0022-0248(00)00375-4
DO - 10.1016/S0022-0248(00)00375-4
M3 - Journal article
VL - 216
SP - 57
EP - 61
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -